PART |
Description |
Maker |
SSRP105B1 9111 SSRP105B1RL SSRP105 |
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
APTGF50DH120T |
Asymmetrical Bridge - IGBT Asymmetrical - Bridge NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
APTGF150DH120 |
200 A, 1200 V, N-CHANNEL IGBT Asymmetrical Bridge - IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
|
APTM20DHM08G |
Asymmetrical Bridge
|
Microsemi
|
APTGT100DH60T3G |
Asymmetrical Bridge
|
Microsemi
|
APTGT100DH120TG |
Asymmetrical Bridge
|
Microsemi
|
APTM10DHM05G |
Asymmetrical Bridge
|
Microsemi
|
|