PART |
Description |
Maker |
IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04 DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04 DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04 128 Mbit Double Data Rate SDRAM
|
Infineon
|
HYB18TC256160AF-3.7 HYB18TC256160AF-5 HYB18TC25616 |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
HYB18TC256160AF |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块) 2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块(2.584脚,512M的位寄存型的DDR - SDRAM内存模块余)
|
SIEMENS AG
|
HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
V58C265164S |
64 Mbit DDR SDRAM 2.5 VOLT 4M X 16
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
HYB25D256160CE-6 HYB25D256800CC-5 HYB25D256800CC-6 |
256 MBIT DOUBLE DATA RATE SDRAM
|
INFINEON[Infineon Technologies AG]
|
HYB18TC256160BF-2.5 HYB18TC256160BF-3.7 HYB18TC256 |
256-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG http://
|
HYB25D256400CC-5 HYB25D256400CC-6 HYB25D256400CE-7 |
256 Mbit Double Data Rate SDRAM
|
Infineon Technologies AG
|