PART |
Description |
Maker |
K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
K4M51163LC-RN75 K4M51163LC-RG75 K4M51163LC-RF1H K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
IC42S16400A IC42S16400A-7TIG IC42S16400A-6BG IC42S |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
K4S561633C-RLN |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
|
Samsung Electronic
|
HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM 16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|