| PART |
Description |
Maker |
| MC68HC05J3 MC68HC05J3CDW MC68HC05J3CP MC68HC05J3DW |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola, Inc
|
| 68HC705SR3 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units
|
Motorola, Inc.
|
| MC68HC705SR3 68HC705SR3 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units
|
MOTOROLA[Motorola, Inc]
|
| MC68HC11PH8CFN3 MC68S11PH8CFN3 MC68S711PH8CFN3 MC6 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Freescale Semiconductor, Inc
|
| JFP |
High Voltage Met Polypropylene Film Capacitor
|
jb Capacitors Company
|
| RN73C2A113KBTG RN73F1J22KBTG RN73F1J43KBTG RN73F1J |
RESISTOR SMD 113K
Metal Film Resistor - RN 1/4 T2 52.3K 1% A
WIDERSTAND 4.3
WIDERSTAND精密气象470R75V.063W
WIDERSTAND 47K
WIDERSTAND精密气象47R 75V的为0.063W
WIDERSTAND PRAEZISION MET 2K2 75V 0.063W WIDERSTAND精密气象2K2 75V的为0.063W
WIDERSTAND 68K WIDERSTAND68K
WIDERSTAND PRAEZISION MET 15R 75V 0.063W WIDERSTAND精密气象15R 75V的为0.063W
RESISTOR SMD 78R7 电阻贴片78R7
WIDERSTAND PRAEZISION MET 330R75V 0.063W WIDERSTAND精密气象330R75V0.063W
|
SCHURTER AG
TE Connectivity, Ltd.
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
LATTICE [Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD
In-System Programmable 3.3V SuperWIDE⑩ High Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
