| PART |
Description |
Maker |
| FM1008-200DC FM1008-200SC FM1008-200PC FMX1308-200 |
1024-16384-bit nonvolatile static RAM family
1024-16384-bit nonvlatile static ram family
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International Corp.
Ramtron International, Corp.
|
| MWS51141 MWS5114E3 MWS5114 MWS5114D1 MWS5114D2 MWS |
1024-Word x 4-Bit LSI Static RAM
|
INTERSIL[Intersil Corporation]
|
| D2148H |
High Speed 1024 x 4-Bit Static RAM
|
Intel
|
| UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC Corp.
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MF3257-J9CATXX MF3513-J9CATXX MF365A-J9CATXX MF312 |
STATIC RAM CARDS
ER 8C 8#12 SKT RECP
8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
| M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 85ns
262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
