| PART |
Description |
Maker |
| 1N4793A 1N4815B 1N4800A 1N4815A 1N4794A 1N4805 1N4 |
Diode VAR Cap Single 22V 27pF 2-Pin DO-7
Diode VAR Cap Single 22V 100pF 2-Pin DO-7
Diode VAR Cap Single 17V 100pF 2-Pin DO-7
Diode VAR Cap Single 22V 33pF 2-Pin DO-7
Diode VAR Cap Single 110V 15pF 2-Pin DO-7
Diode VAR Cap Single 99V 18pF 2-Pin DO-7
Diode VAR Cap Single 22V 18pF 2-Pin DO-7
Diode VAR Cap Single 72V 27pF 2-Pin DO-7
Diode VAR Cap Single 28V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 22V 22pF 2-Pin DO-7
Diode VAR Cap Single 22V 47pF 2-Pin DO-7
Diode VAR Cap Single 28V 10pF 2-Pin DO-7
Diode VAR Cap Single 110V 10pF 2-Pin DO-7
Diode VAR Cap Single 28V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 55V 47pF 2-Pin DO-7
Diode VAR Cap Single 33V 68pF 2-Pin DO-7
Diode VAR Cap Single 61V 39pF 2-Pin DO-7
|
New Jersey Semiconductor
|
| BAR63-03 BAR63-03W Q62702-A1025 BAR6303W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) 硅PIN二极管（PIN码的高速开关二极管的射频信号的频率高达3 GHz的低正向电阻极低的电容）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| R15KP20 R15KP200A R15KP200C R15KP100 R15KP100A R15 |
TRANSIENT VOLTAGE SUPPRESSORS
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 51V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| 1N2931 1N2932A 1N2933 |
Diode 0.025A 3-Pin TO-18
Diode 0.04A 3-Pin TO-18
Diode 0.075A 3-Pin TO-18
|
New Jersey Semiconductor
|
| BAR63-02W Q62702-A1211 BAR6302W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N4004GPE/4G 1N4005GPE/100 1N4002GPE/100 1N4003GPE |
Diodes
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
|
Vishay Beyschlag
|
| 1N5441C 1N5450C 1N5442B 1N5443C 1N5456C 1N5454B 1N |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 33pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| BAR65-07 BAR6507 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HSMP-3860-BLK HSMP-3860-TR1 HSMP-3860-TR2 HSMP-386 |
Surface Mount PIN Diodes
HSMP-386E · Low cost general purpose PIN diode
HSMP-3862 · Low cost general purpose PIN diode
HSMP-386C · Low cost general purpose PIN diode
HSMP-386L · Low cost general purpose PIN diode
HSMP-3863 · Low cost general purpose PIN diode
HSMP-3864 · Low cost general purpose PIN diode
HSMP-386B · Low cost general purpose PIN diode
|
Agilent(Hewlett-Packard...
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
