| PART |
Description |
Maker |
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| TC531024F-12 TC531024F-15 TC531024P-12 TC531024P-1 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| CXK58512TM/M-10LL CXK58512TM/M-55LL CXK58512TM/M-7 |
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5T16100TM-12LLX |
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5B16120J CXK5B16120J-12 CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5V8512TM- CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word X 8-bit High Speed CMOS Static RAM
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| CXK5V16100TM-10LLX CXK5V16100TM-85LLX CXK5V16100TM |
128 x 64 pixel format, LED Backlight available
65536-word X 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| HM6709 |
65536-WORD X 4-BIT HIGH SPEED STATIC RAM (WITH OE)
|
Hitachi,Ltd.
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
