| PART |
Description |
Maker |
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB514400BJ-50- Q67100-Q756 Q67100-Q973 HYB514400B |
RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| MB8116165B-50 MB8116165B-60 |
1 M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超级页面存取模式动态RAM)
1 M ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ?16浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M38503E4SS M38503MXH M37516RSS M38504E6FP M38504E6 |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-Bit CMOS Microcomputer
3850 Series Microcontrollers: General Purpose with A/D Converter
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| VG26S18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG26S18 |
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 60 ns, PDSO42
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 50 ns, PDSO42
1/048/576 x 16 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
| MB81116422A-84 MB81116422A-125 |
CMOS 2×2M ×4 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×2M ×4 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V17805A-70L MB81V17805A-60L |
CMOS 2M ×8 BIT
Hyper Page Mode Dynamic RAM(CMOS 2M ×8 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V16165A-70L |
CMOS 1M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814405C-60 |
CMOS 1M ?4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ?4 浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| MB8117405A-70 |
CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超级页面存取模式动态RAM) 的CMOS 4米4位超页模式动态RAM的CMOS4米4位超级页面存取模式动态内存）
|
Fujitsu, Ltd.
|
