| PART |
Description |
Maker |
| 2NNPP06G-S08-T 2NNPP06G-S08-R 2NNPP06L-S08-R 2NNPP |
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
|
Unisonic Technologies
|
| IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 57A条）
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQD20N06LE FQU20N06LE FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode)
60V LOGIC N-Channel MOSFET 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FQB50N06L FQI50N06L FQB50N06 FQI50N06 FQI50N06LTU |
60V LOGIC N-Channel MOSFET 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
60V N-Channel Logic level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| STB45NF06 |
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条采用D2PAK STripFET⑩功率MOSFET
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET POWER MOSFET
N-CHANNEL 60V 0.022OHM 38A D2PAK STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| FDB024N06 |
N-Channel PowerTrench? MOSFET 60V, 265A, 2.4mΩ
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.4mヘ
|
Fairchild Semiconductor
|
| FDP025N06 |
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
|
http://
Fairchild Semiconductor
|
| IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
| IRFIZ48V IRFIZ48 IRFIZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
|
IRF[International Rectifier]
|
| IRFL014 IRFL014TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)
|
International Rectifier
|
