PART |
Description |
Maker |
MP4210 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
MP4411 |
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PM4575J |
PM4575J Silicon N-Channel Power MOS FET Module
|
HITACHI
|
M68741 68741 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO 硅场效应晶体管功率放大器89 - 915MHz.8W,便携式收音机调
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
M68731H 68731H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER 150-175MHz 7W FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M68745H 68745H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER 896-941MHz 3.8W FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER / 896-941MHz / 3.8W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M68745L 68745L |
From old datasheet system SILICON MOS FET POWER AMPLIFIER / 806-870MHz / 3.8W / FM PORTABLE RADIO RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
2SJ552 2SJ552L 2SJ552S 2SJ552L/S |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
|
HITACHI[Hitachi Semiconductor]
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