| PART |
Description |
Maker |
| ZUMT591 |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.3 to 4.7; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Zetex Semiconductor PLC
|
| TMP86CM23AUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.9 to 21.9; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP87CM48U |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP87CM75F |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 9.9 to 10.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86FH09ANG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| IRF1902PBF |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
International Rectifier
|
| TGF2961-SD |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 8.3 to 9.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
|
TriQuint Semiconductor,Inc.
|
| TA1310ANG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86C420FG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TC7SG32AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
2 Input OR Gate
|
Toshiba Corporation
Toshiba Semiconductor
|
