PART |
Description |
Maker |
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
AUIRF1404Z AUIRF1404ZL AUIRF1404ZS |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
878-2-3 SD878-2-3 |
CAP & CHAN, SMA
|
Winchester Electronics Corporation
|
MUX-08 MUX08BQ MUX08AQ MUX08EQ MUX08FPZ MUX08FQ |
8-Chan JFET Analog Multiplexers
|
Analog Devices
|
NTP75N06 NTP75N06D NTP75N06G NTB75N06 NTB75N06G NT |
Power MOSFET 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 75 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
|