| PART |
Description |
Maker |
| TB62004FW B62006F TB62003FW TB62008F TB62008FW TB6 |
8CH DMOS TRANSISTOR ARRAY WITH GATE THROUGH & DMOS DRIVER
Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC 8CH DMOS TRANSISTOR ARRAY WITH GATE
8CH DMOS TRANSISTOR ARRAY WITH GATE INVERTER & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NOR & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NAND & DMOS DRIVER
|
TOSHIBA
|
| BS223 |
DMOS Transistors (P-Channel)
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE[General Semiconductor]
GE Security, Inc.
|
| BS828 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| BS170 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS809 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
General Semiconductor
GE Security, Inc.
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| ST2301SRG ST2301A |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| CPC3701CTR |
Vertical DMOS FET
|
Clare, Inc.
|
