| PART |
Description |
Maker |
| TLP3111 |
TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
|
Toshiba Semiconductor
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| PM45100K |
Silicon N-Channel Power MOS FET Module
|
Renesas Technology
|
| PM4575J |
Silicon N-Channel Power MOS FET Module
|
Hitachi Semiconductor
|
| PM45502C |
Silicon N-Channel Power MOS FET Module 硅N沟道功率MOS场效应晶体管模块
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
