| PART |
Description |
Maker |
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| PF08122B |
MOS FET Power Amplifier Module
|
Renesas
|
| PF08109B |
MOS FET Power Amplifier Module
|
Hitachi
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68731H 68731H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 150-175MHz 7W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68757H 68757H |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68739M 68739M |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68732UL 68732UL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 380-400MHz, 7W, FM PORTABLE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
|
Hitachi Semiconductor
Renesas Electronics Corporation
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type
TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
