| PART |
Description |
Maker |
| 2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
High Voltage Medium Power NPN Transistor In a Hermetically Sealed Cermic Surface Mount Package For High Reliability Application(高电压、中等功率、高可靠性、NPN晶体管（陶瓷表贴封装
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N3439CSM401 2N3440CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR
|
Seme LAB
|
| 2N6211 2N6213 2N6212 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| FS4UM-12 FS1KM-16A FS20UM-6 |
Power MOSFETs: FS Series, Medium Voltage, 600V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| FS16SM-5 |
Power MOSFETs: FS Series, Medium Voltage, 250V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| RM100DZ-2H RM100DZ-24 RM100CZ-24 RM100CZ-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ZXTP558L ZXTP558LSTZ |
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Diodes Incorporated
|
| RM15TA-24 RM15TA-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM20TPM-2H RM20TPM-24 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| ZTX757 ZTX756 |
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS
|
Diodes Incorporated
Zetex Semiconductors
|
