| PART |
Description |
Maker |
| V53C16129H V53C16129HK60 |
High performance 128K x 16 EDO page mode CMOS dynamic RAM
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic, Corp
|
| IS41C16128-35T IS41C16128-35TI IS41C16128-35K IS41 |
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 35 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 40 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 45 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 50 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 60 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| V53C818H V53C818H30 V53C818H35 V53C818H40 V53C818H |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
|
| V53C808H V53C808H35 V53C808H40 V53C808H45 V53C808H |
HIGH PERFORMANCE 1M x 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| V53C8258H35 |
HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM 高性能256K × 8 EDO公司页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| V53C8125H50 |
ULTRA-HIGH PERFORMANCE, 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
|
| V53C16129H |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
From old datasheet system
128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM）的
128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| ATF22V10C ATF22V10C-10JC ATF22V10C-10JI ATF22V10C- |
High Performance E2 PLD FLASH PLD, 10 ns, PDIP24
Quad Flow through Driver FLASH PLD, 10 ns, PDSO24
High Performance E2 PLD FLASH PLD, 5 ns, PQCC28
High Performance E2 PLD E2类高性能可编程逻辑器件
High Performance E2 PLD FLASH PLD, 7.5 ns, PQCC28
LVDS Dual 2x2 Bi-Directional Crosspoint/Repeater
|
ATM Electronic, Corp.
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
