| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
| KDV273E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
| KDV257E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
| KDV245 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
|
KEC(Korea Electronics)
|
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| HVL381C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD350B |
Variable Capacitance Diode for VCO
|
Guangdong Kexin Industrial Co.,Ltd
|
| HVD355B |
Variable Capacitance Diode for VCO
|
Guangdong Kexin Industrial Co.,Ltd
|
| HVD385B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC375B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD355B |
Variable Capacitance Diode for VCO
|
Zhaoxingwei Electronics ., Ltd
|
