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  v-ds-30v Datasheet PDF File

For v-ds-30v Found Datasheets File :: 13326    Search Time::4.969ms    
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    Vishay
Part No. SI9407AEY-DS
OCR Text ...ay.com 05-nov-99 1 p-channel 50-v (d-s) mosfet characteristics ? p-channel vertical dmos ? macro model (subcircuit model) ? level 3 mo...ds = v gs , i d = ? 250 a 1.82 v on-state drain current a i d(on) v ds ? 5 v, v gs = ? 1...
Description DS-Spice Model for Si9407AEY

File Size 200.67K  /  3 Page

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    Vishay
Part No. SI7415DN-DS
OCR Text ...ay.com 09-oct-01 1 p-channel 60-v (d-s) mosfet characteristics ? p-channel vertical dmos ? macro model (subcircuit model) ? level 3 mo...ds = v gs , i d = ? 250 a 2.1 v on-state drain current a i d(on) v ds < ? 5v, v gs = ? 10...
Description DS-Spice Model for Si7415DN

File Size 193.91K  /  3 Page

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    JILIN SINO-MICROELECTRO...
Part No. JCS2N60V-R-V-N-B
OCR Text ...g device weight jcs2n60 v - o - v - n - b jcs2n60 v ipak no tube 0.3 5 g(typ) jcs2n60 r - o - r - n - b jc...ds b = 6 00v,v b gs b =0v, t b c b =25 - - 1 0 a v b ds b = 48 0v, t b c b =125 -...
Description N-CHANNEL MOSFET

File Size 1,247.52K  /  14 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS5N60VB-O-V-N-B JCS5N60RB-O-R-N-B JCS5N60B JCS5N60FB-O-F-N-B JCS5N60CB-O-C-N-B
OCR Text V 2.4 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate...DS (on ) [ ] 2.2 IDR [A] 2.0 VGS=10V 25 1 1.8 150 1.6 1.4 VGS=20V 1.2...
Description N-CHANNEL MOSFET

File Size 904.53K  /  12 Page

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    NXP Semiconductors N.V.
Part No. BUK661R6-30C
OCR Text ... c rating 1.3 applications ? 12 v automotive systems ? electric and electro-hydraulic power steering ? motors, lamps and solenoid control ?...ds drain-source voltage t j 25 c; t j 175c --30v i d drain current v gs =10v; t mb =25c; see fi...
Description N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 168.02K  /  15 Page

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    IRFZ44EPBF IRFZ44EPBF-15

International Rectifier
Part No. IRFZ44EPBF IRFZ44EPBF-15
OCR Text v gs @ 10v 48 i d @ t c = 100c continuous drain current, v gs @ 10v 34 a i dm pulsed drain current 192 p d @t c = 25c power dissi...ds(on) = 0.023 ? i d = 48a s d g advanced process technology dynamic dv/dt rating 175c opera...
Description ADVANCED PROCESS TECHNOLOGY

File Size 148.97K  /  9 Page

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    ZXMP6A17DN8

Diodes Incorporated
Part No. ZXMP6A17DN8
OCR Text v (br)dss = -60v; r ds(on) = 0.125 ;i d = -3.2a description this new generation of high cell density trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes...
Description DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

File Size 164.64K  /  7 Page

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    AON7408

Alpha & Omega Semiconductors
Part No. AON7408
OCR Text v ds (v) = 30v i d = 23a (v gs = 10v) r ds(on) < 20m w (v gs = 10v) r ds(on) < 32m w (v gs = 4.5v) 100% uis tested! general description the aon7408 uses advanced trench technology and design to provide excellent r ds(on) w...
Description 30V N-Channel MOSFET

File Size 231.79K  /  4 Page

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    Alpha
Part No. AO4918A
OCR Text v ds v v gs v i dm t j , t stg c symbol v ds i fm t j , t stg junction and storage temperature range power dissipation a w 1.28 -55 to 150 c 2 t a =70c pulsed diode forward current b continuous forward current a p d i f t a =25c t a =70...
Description NYLON INSULATED W/INSULATION GRIP BUTT CONNECTOR 非对称双N沟道增强型场效应晶体

File Size 139.63K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTS9539G6
OCR Text ...voltage v gs 220 220 v continuous drain current @t a =25 c (note 1) 0.6 -3.7 continuous drain current ...ds =3v, i d =100 a i gss - - 10 v gs =20v, v ds =0v - - 1 v ds =60v, v gs =0v i dss - ...
Description N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 434.68K  /  13 Page

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