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  irff120 Datasheet PDF File

For irff120 Found Datasheets File :: 9    Search Time::1.234ms    
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    IRFF120

IRF[International Rectifier]
Part No. irff120
OCR Text irff120 BVDSS 100V RDS(on) 0.30 ID 6.0A irff120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient ...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET? TRANSISTOR
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

File Size 130.82K  /  7 Page

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    IRFF120 FN1563

Intersil Corporation
Part No. irff120 FN1563
OCR Text irff120 Data Sheet March 1999 File Number 1563.3 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to w...
Description From old datasheet system
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

File Size 323.78K  /  7 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. irff120
OCR Text irff120 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 6.0a, 100v, 0.300 ohm, n-channel power mosfet this n-channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and ...
Description 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

File Size 152.67K  /  3 Page

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    SEMELAB LTD
Part No. irff120-JQR-BE1
OCR Text irff120 document number 5513 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limit...
Description 6 A, 100 V, 0.345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

File Size 20.47K  /  2 Page

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    IRFF120

GE Solid State
Part No. irff120
OCR Text www.DataSheet4U.com
Description (irff120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

File Size 188.34K  /  5 Page

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    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. irff120 IRFF121 IRFF122 IRFF123
OCR Text
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS

File Size 161.85K  /  5 Page

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    JANTX2N6788 JANTXV2N6788 2N6788

International Rectifier
Part No. JANTX2N6788 JANTXV2N6788 2N6788
OCR Text irff120 BVDSS 100V RDS(on) 0.30 ID 6.0A irff120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient ...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package

File Size 137.35K  /  8 Page

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    IRF[International Rectifier]
Part No. JANTXV2N6788 2N6788 JANTX2N6788
OCR Text ...REF:MIL-PRF-19500/555] [GENERIC:irff120] N-CHANNEL Product Summary Part Number JANTX2N6788 JANTXV2N6788 BVDSS 100V RDS(on) 0.30 ID 6.0A 100 Volt, 0.30 HEXFET HEXFET technology is the key to International Rectifier's advanced line of ...
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

File Size 196.23K  /  6 Page

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