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For pep Found Datasheets File :: 1537 Search Time::1.047ms
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				Freescale Semiconductor, Inc
Part No.	MRF9060LSR1 MRF9060LSR108
OCR Text	...6 volts output power ? 60 watts pep power gain ? 17 db efficiency ? 40% imd ? - 31 dbc ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power features ? integrated esd protection ? designed for maximum gain and inser...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	408.96K / 12 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20195
OCR Text	... it may be used for both CW and pep applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics 26 V...
Description	150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
File Size	47.39K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20204
OCR Text	... it may be used for both CW and pep applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 1.0 Watt, 380-500 MHz Class A Characte...
Description	1.0 Watt, 380-500 MHz RF Power Transistor
File Size	190.03K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20206
OCR Text	... it may be used for both CW and pep applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. Class A Characteristics 1.0 Watt, 470-...
Description	1.0 Watt, 470-860 MHz RF Power Transistor
File Size	379.91K / 2 Page	View it Online	Download Datasheet

				Microsemi
Part No.	VRF150MP
OCR Text	...50v, i dq = 3a, p out = 150w pep , f1 = 30mhz, f2 = 30.001mhz 20 db imd (d3) -50 imd (d9-d13) -75 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = ...
Description	RF ISM VDMOS Power Transistors
File Size	393.04K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTB20219
OCR Text	...um output power for both CW and pep applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. * * * 70 Watts, 925-960 MHz Class AB ...
Description	70 Watts/ 925-960 MHz Cellular Radio RF Power Transistor 70 Watts, 925-960 MHz Cellular Radio RF Power Transistor
File Size	563.11K / 4 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF21085LSR3 MRF21085LSR308
OCR Text	... (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps ? 13.6 ? db two - tone drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 ...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	184.68K / 11 Page	View it Online	Download Datasheet

				Microsemi
Part No.	VRF148AMP
OCR Text	...0v, i dq = 1.0a, p out = 10w pep 20 db imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep -50 imd (d9-d13) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep -70 functional...
Description	RF ISM VDMOS Power Transistors
File Size	176.11K / 5 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF141
OCR Text	... MHz (VDD = 28 V, Pout = 150 W (pep), IDQ = 250 mA) f = 175 MHz Drain Efficiency (VDD = 28 V, Pout = 150 W (pep), f = 30; 30.001 MHz, IDQ = 250 mA, ID (Max) = 5.95 A) Intermodulation Distortion (1) (VDD = 28 V, Pout = 150 W (pep), f = 30 MH...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	159.11K / 8 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20235
OCR Text	...1 to 2.2 GHz. Rated at 70 watts pep minimum output power, it is specifically intended for operation as a final stage in Wide CDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliabil...
Description	70 Watts 2.1-2.2 GHz Wideband CDMA Power Transistor 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor
File Size	126.66K / 5 Page	View it Online	Download Datasheet

For pep Found Datasheets File :: 1537 Search Time::1.047ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |