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Alpha & Omega Semiconductor
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| Part No. |
AONS32314
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| OCR Text |
on) (at v gs =10v) < 8.7m r ds(on) (at v gs =4.5v) < 12.3m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as ...time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =15v, r l =0.75... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
231.85K /
6 Page |
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Qorvo
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| Part No. |
QPM1002
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| OCR Text |
...r. the qpm1002 is fabricated on qorvo's qgan25 0.25um gan- on -sic process. the 5 x 5 mm qfn surface mount package with over-mold en...time, rising edge 1 20 ns switch settling time, falling edge 2 100 ns gain... |
| Description |
8.5 - 10.5 GHz GaN Transmit / Receive Module
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| File Size |
1,090.36K /
22 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF42S60
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| OCR Text |
...j,max 700v i dm 166a r ds(on),max 0.099 q g,typ 40nc e oss @ 400v 9.2 j 100% uis tested 100% r g tested for halogen free...time turn-off delaytime body diode reverse recovery time i f =21a,di/dt=100a/ s,v ds =400v reverse ... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
282.90K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF12T50P
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| OCR Text |
on),max < 0.5? q g,typ 22nc e oss @ 400v 4 j applications 100% uis tested 100% r g tested orderable part number form minimum o...time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 400v, f=1mhz v ds =0v, v gs =30v g... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
411.08K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STU2N80K5
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| OCR Text |
on a product in full production. february 2014 docid024993 rev 2 1/23 23 std2n80k5, stf2n80k5, stp2n80k5, stu2n80k5 n-channel 800 v, 3.5 ...time related is defined as a constant equivalent capacitance giving the same charging time as c oss... |
| Description |
N-channel 800 V, 3.5 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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| File Size |
1,597.49K /
23 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STU26NM50
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| OCR Text |
... ? power mosfet n typical r ds (on) = 0.10 w n high dv/dt and avalanche capabilities n improved esd capability n low input capacitance and g...time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. m... |
| Description |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
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| File Size |
134.15K /
11 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STU2071B1 STU2071FN
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| OCR Text |
...l for loop and error mes- sages on subscriber lines. uic enables full duplex continuous data transmis- sion via the standard twisted pair t ...time slot time slot time slot in nt: pins value lt burst s0 s1 s2 0 0 0 0 1 test pins should always ... |
| Description |
4B3T U INTERFACE CIRCUIT
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| File Size |
279.17K /
18 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF4N60
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| OCR Text |
...i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 2.2 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/...time turn-on rise time body diode reverse recovery time reverse transfer capacitance electrical char... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
359.99K /
6 Page |
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it Online |
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Nexperia
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| Part No. |
PMCM4401VNE
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| OCR Text |
...acteristics r dson drain-source on-state resistance v gs = 4.5 v; i d = 3 a; t j = 25 c - 36 42 m [1] device mounted on an fr4 printed-ci...time - 6.3 - ns t r rise time - 35.5 - ns t d(off) turn-off delay time - 30 - ns t f fall time v ds ... |
| Description |
12V, N-channel Trench MOSFET
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| File Size |
320.46K /
15 Page |
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it Online |
Download Datasheet |
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