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Motorola
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Part No. |
MRF6S21100H MOTOROLAINC-MRF6S21100HSR3
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OCR Text |
...fect Transistors MRF6S21100HR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To... |
Description |
2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA Lateral N?Channel RF Power MOSFET
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File Size |
406.27K /
12 Page |
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Download Datasheet |
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Freescale Semiconductors
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Part No. |
MRF6S21100NBR1 MRF6S21100N
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OCR Text |
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f ... |
Description |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
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File Size |
510.14K /
12 Page |
View
it Online |
Download Datasheet |
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Freescale (Motorola) MOTOROLA[Motorola, Inc]
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Part No. |
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
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OCR Text |
... 250 mA f = 1960 MHz, 1-Carrier n-cdma 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. D, DRAIN EFFICIENCY (%)
Figure 6. Power Gain and Drain Efficiency versus Output Power
Figure 7. Power Gain and Drain Efficiency versus Output Power
MW4IC... |
Description |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
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File Size |
579.33K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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