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0SMCJ22 74HC59 500XT 00AXC 24000 100LVE B7829 TDA7326
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For merit Found Datasheets File :: 883    Search Time::1.671ms    
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    LA1136

Sanyo Semicon Device
Part No. LA1136
OCR Text ...al-to-noise ratio AGC figure-of-merit Total harmonic distortion Signal meter output voltage Stop detector sensitivity Local-oscillator buffer output voltage IF buffer output voltage IF count buffer output voltage IF count buffer output leak...
Description AM Tuners for Car Radios and Home Stereos

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    MMVL809T1 MMVL809T1G

ONSEMI[ON Semiconductor]
Part No. MMVL809T1 MMVL809T1G
OCR Text ...0 Unit Vdc nAdc Q, Figure of merit VR = 3.0 Vdc f = 500 MHz Typ 75 CR, Capacitance Ratio C2/C8 (Note 2) f = 1.0 MHz Min 1.8 Max 2.6 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. TYPICAL CHARACTE...
Description UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode

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    ON Semi
Part No. MMVL2101T1 ON2292
OCR Text ...t Vdc Adc ppm/C Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a c...
Description 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system

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    ON Semi
Part No. MMVL2101T1_D ON2291
OCR Text ....1 Nom 6.8 Max 7.5 Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacit...
Description 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system

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    MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D

ONSEMI[ON Semiconductor]
Part No. MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D
OCR Text ...t Vdc Adc ppm/C Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a c...
Description    Silicon Tuning Diode
Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE

File Size 42.92K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. MMBV609LT1_06 MMBV609LT1 MMBV609LT1G MMBV609LT106
OCR Text ...* * * * * * * High Figure of merit - Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz Guaranteed Capacitance Range Dual Diodes - Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved M...
Description    Silicon Tuning Diode

File Size 42.33K  /  3 Page

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    Q62702-B257 BBY34D Q62702-B194 BBY34C

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-B257 BBY34D Q62702-B194 BBY34C
OCR Text ...range 4 ... 12 V High figure of merit Type BBY 34 C BBY 34 D Marking - Ordering Code Q62702-B257 Q62702-B194 Pin Configuration Package1) D Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Stor...
Description Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五)
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)

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    ONSEMI[ON Semiconductor]
Part No. MMVL2101T1_06 MMVL2101T1 MMVL2101T1G MMVL2101T106
OCR Text ... Vdc mAdc ppm/C Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (...
Description Silicon Tuning Diode

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    ONSEMI[ON Semiconductor]
Part No. MV104_06 MV10406
OCR Text ... and detuning. * High Figure of merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz * Guaranteed Capacitance Range 37-42 pF @ VR = 3.0 Vdc (MV104) * Dual Diodes - Save Space and Reduce Cost * Monolithic Chip Provides Near Perfect Matching - Gu...
Description DUAL VOLTAGE VARIABLE CAPACITANCE DIODE

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    LRC[Leshan Radio Company]
Part No. MV409 MMBV409LT1
OCR Text ...6 Nom 29 Max 32 Q, Figure of merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min 1.5 Max 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. LESHAN RADIO COMPANY, LTD....
Description    Silicon Tuning Diode

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