|
|
![](images/bg04.gif) |
KINGBRIGHT[Kingbright Corporation]
|
Part No. |
L-937
|
OCR Text |
LIGHT OUTPUT. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode.... |
Description |
T-1(3MM) BI-COLOR INDICATOR LAMPS
|
File Size |
177.23K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
KINGBRIGHT[Kingbright Corporation]
|
Part No. |
LF5WAEMBGMBW LF5WAEMBGMBC
|
OCR Text |
...ide on Gallium Phosphide Orange Light Emitting Diode. The Blue source color devices are made with GaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or anti-electrostatic glo... |
Description |
T-1 3/4 (5mm) FULL COLOR RGB LAMPS
|
File Size |
107.87K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
PANASONIC[Panasonic Semiconductor]
|
Part No. |
LN151L LN151 LN151F
|
OCR Text |
Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 s (t... |
Description |
GaAs Infrared Light Emitting Diodes
|
File Size |
40.00K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
PANASONIC[Panasonic Semiconductor]
|
Part No. |
LN152
|
OCR Text |
Light Emitting Diodes
LN152
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : = 100 de... |
Description |
GaAs Infrared Light Emitting Diode
|
File Size |
35.81K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
Part No. |
LN172
|
OCR Text |
Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : P = ... |
Description |
GaAlAs Infrared Light Emitting Diode
|
File Size |
35.25K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
PANASONIC[Panasonic Semiconductor]
|
Part No. |
LN175
|
OCR Text |
Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.50.2
Features
High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited ... |
Description |
GaAlAs Infrared Light Emitting Diode
|
File Size |
41.45K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
Part No. |
LN184
|
OCR Text |
Light Emitting Diodes
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems Features
High-power output, high-efficiency : PO = 5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = ... |
Description |
GaAlAs Infrared Light Emitting Diode
|
File Size |
40.88K /
2 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|