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| Part No. |
IRHLUB7930Z4
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| OCR Text |
... j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -10v i gss gate-to-source leakage reverse ? ? 100 v gs = 10v q g total gate charge ? ? 3.6 v gs = -4.5v, i d = -0.53a q gs gate-to-source charge ? ? 1.5 nc v ds = -30v q g... |
| Description |
530 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
201.46K /
10 Page |
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it Online |
Download Datasheet
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
BAV45
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| OCR Text |
... bav45 features ? extremely low leakage current: max. 5 pa ? low diode capacitance ? light insensitive. application ? clamping ? holding ? peak follower ? time delay circuits ? logarithmic amplifiers ? protection of insulated gate field-eff... |
| Description |
Picoampere diode
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| File Size |
66.72K /
2 Page |
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it Online |
Download Datasheet |
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ADVANCED POWER ELECTRONICS CORP
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| Part No. |
AP9565BGJ
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| OCR Text |
...8a - 9.6 - s i dss drain-source leakage current v ds =-40v, v gs =0v - - -10 ua drain-source leakage current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charg... |
| Description |
17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
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| File Size |
94.15K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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