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RFMD[RF Micro Devices]
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| Part No. |
RF3802_06 RF3802 RF3802PCBA-410 RF3802PCBA-411 RF380206
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| OCR Text |
...s HBT fabrication process, this high-performance dual-stage amplifier achieves high output power over a broad frequency range. The RF3802 am...Loss Output Return Loss OIP3
Specification Min. Typ. Max.
Unit
Condition
IREF =22mA, VCC =... |
| Description |
GaAs HBT PRE-DRIVER AMPLIFIER
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| File Size |
1,108.02K /
12 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
RF3806PCK-415 RF3806
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| OCR Text |
...
3
Features
4W Output Power High Linearity 1500MHz to 2200MHz Operation 5V to 8V Supply with Adjustable Bias
VCC1 1 VREF 2 RF IN 3 V_BI...Loss (S11) Output Return Loss (S22)
Min.
Specification Typ.
Max.
Unit
Condition
21... |
| Description |
GaAs HBT PRE-DRIVER AMPLIFIER
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| File Size |
553.93K /
18 Page |
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it Online |
Download Datasheet |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
GB50NA120UX
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| OCR Text |
high side chopper" igbt sot-227 (ultrafast igbt), 50 a gb50na120ux vishay high power products features ? npt generation v igbt technology...loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 , l = 500 h energy losses include ta... |
| Description |
84 A, 1200 V, N-CHANNEL IGBT
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| File Size |
150.59K /
9 Page |
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it Online |
Download Datasheet |
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SKYWORKS SOLUTIONS INC
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| Part No. |
ASC02M2-12
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| OCR Text |
...low = 0 to -0.2 v @ 20 a max. v high = -5 v @ 50 a to -8 v @ 200 a max. gaas ic spdt switch non-reflective dc?2.5 ghz features high isolati...loss 3 dc?0.5 ghz 0.7 0.8 db dc?1.0 ghz 0.8 1.0 db dc?2.0 ghz 1.1 1.2 db dc?2.5 ghz 1.2 1.4 db isola... |
| Description |
0.3 MHz - 2500 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.4 dB INSERTION LOSS
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| File Size |
26.37K /
2 Page |
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it Online |
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LIGHTEL TECHNOLOGIES INC
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| Part No. |
WDCBAL6
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| OCR Text |
...ow insertion loss and pdl ? high channel isolation ? high stability and reliability without temperature control ? optical path epoxy free applications ? dwdm system ? optical system monitoring ? fiber optic instrument d c... |
| Description |
FIBER OPTIC WAVELENGTH DIVISION MUX/DEMUX, SC/SPC CONNECTOR
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| File Size |
146.30K /
1 Page |
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it Online |
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RAYTHEON[Raytheon Company]
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| Part No. |
RMPA61800
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| OCR Text |
...uses a .25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configur...Loss Output Return Loss Gate Voltage (Vg)1 Gain vs. Temp. 0~85C
Min
Typ 9.5 7.4 -0.4 -0.025
... |
| Description |
Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC
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| File Size |
378.43K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RMPA61810
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| OCR Text |
...ses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configur...Loss Output Return Loss Gate Voltage (Vg)1 Gain vs. Temp. 0 ~ 85C
Note: 1. Typical range of the neg... |
| Description |
6-18 GHz 1W Power Amp
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
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| File Size |
544.49K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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