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For discrete Found Datasheets File :: 18442    Search Time::1.453ms    
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    NXP Semiconductors N.V.
Part No. PCK2001M_6 PCK2001M
OCR Text ...Over MIN (20 pF) to MAX (30 pF) discrete load, process, voltage, and temperature. 7. Input edge rate for these tests must be faster than 1 V/ns. 8. Calculated at minimum edge rate (1.5 ns) to guarantee 45/55% duty cycle at 1.5 V. Pulsewidth...
Description 14.318-150 MHz IIC 1:10 clock buffer(14.318-150 MHz IIC 1:10时钟缓冲 14.318-150兆赫进口:10时钟缓冲器(14.318-150兆赫进口:10时钟缓冲器)
From old datasheet system

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    NXP Semiconductors N.V.
Part No. PCK2001R_2 PCK2001RDB
OCR Text .... Over MIN (20pF) to MAX (30pF) discrete load, process, voltage, and temperature. 7. Input edge rate for these tests must be faster than 1 V/ns. 8. Calculated at minimum edge rate (1.5ns) to guarantee 45/55% duty cycle at 1.5V. Pulsewidth i...
Description 533 MHz I2C 1:6 clock buffer PCK2001RDB<SOT369-1 (SSOP16)|<<http://www.nxp.com/packages/SOT369-1.html<1<week 13, 2005,;PCK2001RDB<SOT369-1 (SSOP16)|<<http://www.nxp.com/packages/SOT369-1.html<1<week 13, 2005,;
From old datasheet system

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    Intel
Part No. 82433NX 82433LX
OCR Text ...otal of 29 (30 for the 82433NX) discrete commands The PCMC sends HIG commands to direct the LBX to perform functions related to buffering and storing host data and or address 2 Memory Interface Group These control signals are named MIG 2 0 ...
Description LOCAL BUS ACCELERATOR (LBX)

File Size 530.69K  /  54 Page

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    V2F118X500Y3D V2F118C400Y1FRP V2F114C300Y1F V2F114A300Y2E V2F105A150Y2E V2F118A400Y2E V2F105A150Y2ERP V2F105C150Y1F V2F1

AVX Corporation
Part No. V2F118X500Y3D V2F118C400Y1FRP V2F114C300Y1F V2F114A300Y2E V2F105A150Y2E V2F118A400Y2E V2F105A150Y2ERP V2F105C150Y1F V2F109A200Y2E V2F109C200Y1F V3F418A400Y3G V3F418X500Y3G
OCR Text ...ponent temperature ( c) 1 74 discrete mlv model where: r v = voltage variable resistance (per vi curve) r p 10 12 c = defined by voltage rating and energy level r on = turn on resistance l p = parallel body inductance discrete mlvf mode...
Description TransFeed AVX Multilayer Cermic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip
AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip

File Size 387.88K  /  8 Page

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    BFG11W BFG11W_X BFG11W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG11W BFG11W_X BFG11W/X
OCR Text discrete SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification ...
Description Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
NPN 2 GHz power transistor

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    BFY180

SIEMENS AG
Siemens Semiconductor Group
Part No. BFY180
OCR Text discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 BFY 180 M...
Description HiRel NPN Silicon RF Transistor (HiRel discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
From old datasheet system

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    BFY181

Siemens Semiconductor Group
Part No. BFY181
OCR Text discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 561...
Description From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel discrete and Microwave Semiconductor)

File Size 96.09K  /  5 Page

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For discrete Found Datasheets File :: 18442    Search Time::1.453ms    
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