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				SST[Silicon Storage Technology, Inc]
Part No.	SST25VF016B-50-4C-S2AF SST25VF016B-50-4C-QAF SST25VF016B-50-4I-S2AF SST25VF016B SST25VF016B-50-4I-QAF
OCR Text	Data Sheet FEATURES: * Single Voltage Read and Write Operations - 2.7-3.6V * Serial Interface Architecture - SPI Compatible: Mode 0 and ...driven after the falling edge of the SCK clock signal. DEVICE OPERATION The SST25VF016B is acces...
Description	16 MBIT SPI SERIAL FLASH
File Size	323.17K / 28 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K7P401823M-HC700 K7P401823M K7P40361823M
OCR Text	...c. 1998 oct. 2000 the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the righ...driven to the cpu in the following cycle. ss is driven low during this cycle, signaling that the ...
Description	128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet 256K X 18 STANDARD SRAM, 7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
File Size	335.94K / 12 Page	View it Online	Download Datasheet

				SST[Silicon Storage Technology, Inc]
Part No.	SST25VF040 SST25VF040-20-4C-S2AE SST25VF040-20-4E-S2AE SST25VF040-20-4I-S2AE SST25VF040-20-4C-QAE SST25VF040-20-4E-QAE SST25VF040-20-4I-QAE
OCR Text	...PI) flash memory EOL Product Data Sheet FEATURES: * Single 2.7-3.6V Read and Write Operations * Serial Interface Architecture - SPI C...driven after the falling edge of the SCK clock signal. Data BFH 00000H MEMORY ORGANIZATION ...
Description	2 MBIT / 4 MBIT SPI SERIAL FLASH
File Size	303.80K / 23 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7P401823B-HC650 K7P401823B-HC750 K7P403623B
OCR Text	...n. 2003 jun. 2003 the attached data sheets are prepared and approved by samsung elec tronics. samsung electronics co., ltd. reserve the rig...driven to the cpu in the following cycle. ss is driven low during this cy cle, signaling that the ...
Description	256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119 128Kx36 & 256Kx18 SRAM
File Size	310.68K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K7P401811M-HC160 K7P403611M-HC200 K7P403611M
OCR Text	...us pipelined sram the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the righ...driven to the cpu during the second clock edge. ss is driven low during this cycle, signaling that...
Description	128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet 128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
File Size	328.76K / 13 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SJ243 D11215EJ1V0DS00
OCR Text	DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not neces...
Description	From old datasheet system P-CHANNEL MOS FET FOR SWITCHING
File Size	58.34K / 6 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	TH7899M
OCR Text	...adout Through 1, 2 or 4 Outputs Data Rates up to 4 x 20 MHz (Compatibility with 15 Frames/Second) Possible Binning 2 x 2 Pixels (Format 1024...driven separately by four-phase clocks (P1 P2 P3 and P4) allowing different operating modes as descr...
Description	From old datasheet system FullFieldCCDImageSensor 2048x20Pixels48
File Size	1,268.22K / 24 Page	View it Online	Download Datasheet


Part No.	KM736V747T-10
OCR Text	...hrough n t ram tm the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the righ...driven to low once the device has been deselected in order to load a new address for next operation....
Description	128K X 36 ZBT SRAM, 10 ns, PQFP100
File Size	386.96K / 17 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	FM25CL64B-13
OCR Text	... 14 ) read/writes 38 year data retention ( @ +75oc) nodelay? writes advanced high - re liability ferroelectric process ...driven to a valid logic level to meet idd specifications. * si may be co nnected to so for a sing...
Description	64Kb Serial 3V F-RAM Memory
File Size	371.32K / 17 Page	View it Online	Download Datasheet

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