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    MGFC36V3436 MGFC36V343611

Mitsubishi Electric Semiconductor
Part No. MGFC36V3436 MGFC36V343611
OCR Text ...ower dissipation 25 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 86.77K  /  2 Page

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    MGFC36V3742A MGFC36V3742A11

Mitsubishi Electric Semiconductor
Part No. MGFC36V3742A MGFC36V3742A11
OCR Text ...ower dissipation 25 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 117.11K  /  3 Page

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    MGFC36V4450A MGFC36V4450A11

Mitsubishi Electric Semiconductor
Part No. MGFC36V4450A MGFC36V4450A11
OCR Text ...ower dissipation 25 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 86.79K  /  2 Page

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    MGFC36V5867 MGFC36V586711

Mitsubishi Electric Semiconductor
Part No. MGFC36V5867 MGFC36V586711
OCR Text ...ower dissipation 25 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 158.34K  /  3 Page

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    MGFC36V5964A MGFC36V5964A11

Mitsubishi Electric Semiconductor
Part No. MGFC36V5964A MGFC36V5964A11
OCR Text ...ower dissipation 25 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 116.38K  /  3 Page

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    MGF0909A11

Mitsubishi Electric Semiconductor
Part No. MGF0909A11
OCR Text ...wer dissipation 27.3 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. i dss sa...
Description High-power GaAs FET(small signal gain stage)

File Size 109.37K  /  3 Page

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    AMS2027 AMS2027P AMS2027S

Advanced Monolithic Sys...
ADMOS[Advanced Monolithic Systems]
Advanced Monolithic Systems, Inc.
Part No. AMS2027 AMS2027P AMS2027S
OCR Text ...ower packages. The use of the N-cannel MOSFET which has low on-resistance, makes it possible for small surface-mount packages to pass large currents. To determine the power dissipation and junction temperature the first step is to find rON ...
Description SINGLE POWER DISTRIBUTION SWITCH

File Size 45.27K  /  5 Page

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Part No. MGFC38V647211
OCR Text ...ower dissipation 30 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 109.33K  /  3 Page

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Part No. MGFC39V6472A MGFC39V6472A11
OCR Text ...er dissipation 42.8 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 86.79K  /  2 Page

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