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2SC536 1N957C LMUN2233 SMCJ8 MT8971B A7108 A1322EUA SSS7N60
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    Brilliance Semiconducto...
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BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Part No. BS616LV1626TI BS616LV1622TC-55 BS616LV1622TC-70 BS616LV1622TCG55 BS616LV1622TCG70 BS616LV1622TCP55 BS616LV1622TCP70 BS616LV1622TI-55 BS616LV1622TI-70 BS616LV1622TIG55 BS616LV1622TIG70 BS616LV1622TIP55 BS616LV1622TIP70 BS616LV1626 BS616LV1626TC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 15uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC . This device provide three control inputs and three states output ...
Description Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
LM4922 Boomer ® Audio Power Amplifier Series Ground-Referenced, Ultra Low Noise, Fixed Gain, 80mW Stereo Headphone Amplifier; Package: MICRO SMD; No of Pins: 14
LM4921 Low Voltage I 2 S 16-Bit Stereo DAC with Stereo Headphone Power Amplifiers and Volume Control; Package: MICRO SMD; No of Pins: 20 非常低功电压CMOS SRAM00万16M × 8位开
LM4921? Low Voltage I 2 S 16-Bit Stereo DAC with Stereo Headphone Power Amplifiers and Volume Control; Package: MICRO SMD; No of Pins: 20

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    BSI[Brilliance Semiconductor]
Part No. BS616LV8021AI BS616LV8021 BS616LV8021AC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 70/100ns in 3.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), ...
Description Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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    BSI[Brilliance Semiconductor]
Part No. BS616LV8022BI BS616LV8022 BS616LV8022BC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70/100ns in 3.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2)...
Description Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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Part No. IBM39ENV420 IBM39ENV422
OCR Text ...ppli- cation. the chip supports both mpeg-1 and mpeg- 2 real-time encoding. it handles multiple profiles and levels including 4:2:2 profile at main level and can encode picture resolutions up to 720x512 and 720x608 in ntsc and pal, respecti...
Description SPECIALTY CONSUMER CIRCUIT, PBGA420

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    BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Part No. BS616LV8025BI BS616LV8025 BS616LV8025BC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3uA and maximum access time of 55/70ns in 5.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), a...
Description LM5022 60V Low Side Controller for Boost and SEPIC; Package: MINI SOIC; No of Pins: 10
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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    74HC173D

NXP Semiconductors
Part No. 74HC173D
OCR Text ...ck (cp) transition. when one or both e n inputs are high one set-up time prior to the low-to-high clock transition, the register will retain the previous data. data inputs and clock enable inputs are fully edge-triggered and must be stable...
Description Quad D-type flip-flop; positive-edge trigger; 3-state

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    IRF6633

International Rectifier
Part No. IRF6633
OCR Text ...ce by 80%. the irf6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and s witching losses. the reduced total losses make this product ideal for high efficiency dc-dc converter...
Description RoHs Compliant Containing No Lead and Bromide

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    BSI[Brilliance Semiconductor]
Part No. BS616UV1620FI BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2.0V operation. This device provide three control inputs and three states output driv...
Description Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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    BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
Part No. BS616UV8020BI BS616UV8020 BS616UV8020BC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), ...
Description Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开

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    BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Part No. BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
OCR Text ... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2)...
Description Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开

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DNET,5M,SHIELDED,CONN BOTH END (ALTERNATE: DCA15CS05W1)
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TTI

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