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  7w 7w Datasheet PDF File

For 7w 7w Found Datasheets File :: 1427    Search Time::1.625ms    
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    RA07N4452M-101 RA07N4452M10

Mitsubishi Electric Semiconductor
Part No. RA07N4452M-101 RA07N4452M10
OCR Text ...in =20mw ? h t >43% @ p out =7w (v gg control), v dd =9.6v, p in =20mw ? broadband frequency range: 440-520mhz ? low-power control current i gg =1ma (typ) at v gg =3.5v ? module size: 30 x 10 x 5.4 mm ? linear operation is possible ...
Description RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO

File Size 141.90K  /  9 Page

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    RA07M2127M10

Mitsubishi Electric Semiconductor
Part No. RA07M2127M10
OCR Text 7w 7.2v, 2stage amp. for portable radio ra07m2127m 30 jun 2010 1/9 electrostatic sensitive device observe handling precautions descr...7w @ v dd =7.2v, v gg =3.5v, p in =20mw ? t >45% @ p out =6.5w (v gg control), v dd =7.2v, p i...
Description 215-270MHz 7w 7.2V, 2Stage Amp. For PORTABLE RADIO

File Size 98.20K  /  9 Page

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    STK4352

SANYO[Sanyo Semicon Device]
Part No. STK4352
OCR Text 7w + 7w min, THD = 1.0%) Features * Small and slim package with 25.5mm height. * Capable of guaranteeing substrate temperature 125C, thereby reducing heat sink. * Excellent cost performance. Package Dimensions unit: mm 4032 [STK43...
Description AF Power Amplifier (7w 7w min, THD = 1.0%)

File Size 436.06K  /  6 Page

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    RA07M1317MSA10

Mitsubishi Electric Semiconductor
Part No. RA07M1317MSA10
OCR Text ...hs compliance , 135-175mhz 6.7w 7.2v, 2 stage amp. for portable radio ra07m1317msa 30 jun 2010 1/9 electrostatic sensitive device observe handling precautions description the ra07m1317msa is a 6.7-watt rf mosfet amplifier m...
Description 135-175MHz 6.7w 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 141.49K  /  9 Page

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    AM1517-012 2711

意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. AM1517-012 2711
OCR Text ... 1.5 -- 1.7GHz = = = PIN = 1.7w PIN = 1.7w PIN = 1.7w VCC = 28V VCC = 28V VCC = 28V 12 55 8.5 13 58 -- -- -- -- W % dB AM1517 series vary PIN to achi eve P OUT; perf ormance guaranteed in 50 MHz increment s. Alpha-Suff ...
Description RF & Microwave Transistors Satellite Communications Applications(用于卫星通信的RF和微波晶体管)
From old datasheet system
SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS

File Size 86.06K  /  6 Page

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    MU7-960-01 MU7-960-04 MU7-940-01 MU7-940-04 MU7-915-01 MU7-915-04 MU6-975-01 MU6-975-04

Bookham, Inc.
Part No. MU7-960-01 MU7-960-04 MU7-940-01 MU7-940-04 MU7-915-01 MU7-915-04 MU6-975-01 MU6-975-04
OCR Text 7w/6W 9xxnm Uncooled Multimode Laser Diode Module MUx-9xx-01/04 The Bookham MUx-9xx-01/04 multimode laser diode module series has been desi...7w/6W * 0.22NA 105m core multimode fiber pigtail (0.15NA upon request) * Hermetically sealed 3-pin a...
Description 7w/6W 9xxnm Uncooled Multimode Laser Diode Module

File Size 497.66K  /  5 Page

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    RD07MVS2 RD07MVS211

Mitsubishi Electric Semiconductor
Part No. RD07MVS2 RD07MVS211
OCR Text ... power transistor,175mhz,520mhz,7w description rd07mvs2 is a mos fet type transistor specifically designed for v hf /uhf rf po wer amplifiers applications. this device has a n internal monolithic zener diode from gate to source for esd prot...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7w

File Size 443.38K  /  10 Page

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    SEC8-975-01 SEC8-960-01 SEC8-940-01 SEC8-915-01

Bookham, Inc.
Part No. SEC8-975-01 SEC8-960-01 SEC8-940-01 SEC8-915-01
OCR Text 7w 9xxnm High Power Single Emitter Laser Diode on C-mount SECx-9xx-01 The Bookham SECx-9xx-01 single emitter laser diode series has been de...7w operating power (p-side down mounted) * Highly reliable single quantum well MBE structure * Stand...
Description 8W/7w 9xxnm High Power Single Emitter Laser Diode on C-mount

File Size 427.47K  /  4 Page

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    RD07MVS1 RD07MVS111

Mitsubishi Electric Semiconductor
Part No. RD07MVS1 RD07MVS111
OCR Text ... power transistor,175mhz,520mhz,7w description rd07mvs1 is a mos fet type transistor specifically designed for v hf /uhf rf power amplifiers applications. features high po wer g ain: pout> 7 w, gp> 10 db@vdd= 7.2 v,f= 520m hz high efficienc...
Description RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7w

File Size 422.30K  /  10 Page

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