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Fairchild Semiconductor Corporation
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| Part No. |
BDW93
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| OCR Text |
... v cb = 45v, i e = 0 v cb = 60v, i e = 0 v cb = 80v, i e = 0 v cb = 100v, i e = 0 100 100 100 100 a a a a i ceo coll...10a 1000 750 100 20000 v ce (sat) * collector-emitter saturation voltage i c = 5a, i b = 20ma ... |
| Description |
NPN Epitaxial Silicon Transistor(NPN硅外延晶体管)
NPN Epitaxial Silicon Transistor(NPN纭??寤舵?浣??)
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| File Size |
65.27K /
5 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE391 NTE390
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| OCR Text |
...e Current: ICEO = 0.7mA @ VCE = 60v D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, ...10a Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Complementary Transistors General Purpose
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| File Size |
20.26K /
2 Page |
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it Online |
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Fairchild Semiconductor Corporation
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| Part No. |
IRFWZ14
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| OCR Text |
...rent: 10 m a (max.) @ v ds = 60v lower r ds(on) : 0.097 w (typ.) $gydqfhg 3rzhu 026)(7 thermal resistance junction-to-case junction...10a, v dd =25v, r g =27 w , starting t j =25 c (3) i sd 10a, di/dt 200a/ m s, v dd bv ds... |
| Description |
60v N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管)
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| File Size |
226.64K /
7 Page |
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it Online |
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SavantIC
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| Part No. |
2N6383
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| OCR Text |
...v ce =40v; i b =0 2n6384 v ce =60v; i b =0 i ceo collector cut-off current 2n6385 v ce =80v; i b =0 1.0 ma 2n6383 v ce =40v; v be ...10a ; v ce =3v 100 c ob output capacitance i e =0; v cb =10v;f=1mhz 200 pf
savantic sem... |
| Description |
(2N6383 - 2N6385) Silicon Power Transistor
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| File Size |
141.42K /
3 Page |
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it Online |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
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| Part No. |
FX20ASJ-06
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| OCR Text |
................................. -60v * rDS (ON) (MAX) ................................................ 97m * ID ................................10a, VGS = -10V ID = -10a, VGS = -4V ID = -10a, VGS = -10V ID = -10a, VDS = -10V VDS = -10V, VGS = 0... |
| Description |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE
ER 3C 3#16S SKT RECP LINE 20 A, 60 V, 0.097 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
63.20K /
4 Page |
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it Online |
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Fairchild Semiconductor Corporation
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| Part No. |
IRFSZ14A
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| OCR Text |
...ent : 10 (max.) @ v ds = 60v lower r ds(on) : 0.097 (typ.) advanced power mosfet thermal resistance junction-to-case junc...10a, r g =24 see fig 13 v ds =48v,v gs =10v, i d =10a see fig 6 & fig 12 drain-to-source ... |
| Description |
N-Channel Power MOSFET0V.14ΩAN沟道功率MOS场效应管（漏源电0V，导通电.14Ω，漏电流8A
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| File Size |
251.82K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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