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  60v 10a Datasheet PDF File

For 60v 10a Found Datasheets File :: 2085    Search Time::1.188ms    
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    Fairchild Semiconductor Corporation
Part No. BDW93
OCR Text ... v cb = 45v, i e = 0 v cb = 60v, i e = 0 v cb = 80v, i e = 0 v cb = 100v, i e = 0 100 100 100 100 a a a a i ceo coll...10a 1000 750 100 20000 v ce (sat) * collector-emitter saturation voltage i c = 5a, i b = 20ma ...
Description NPN Epitaxial Silicon Transistor(NPN硅外延晶体管)
NPN Epitaxial Silicon Transistor(NPN纭??寤舵?浣??)

File Size 65.27K  /  5 Page

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    IRFZ14L

International Rectifier
Part No. IRFZ14L
OCR Text ...solute maximum ratings v dss = 60v r ds(on) = 0.20 w i d = 10a 2 d pak to-262 s d g 8/25/97 description third generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-...
Description Advanced Process Technology / Surface Mount

File Size 236.53K  /  10 Page

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    FMMT720

Zetex Semiconductors
Part No. FMMT720
OCR Text ...nt i cbo -100 -100 na na v cb =-60v v cb =-80v emitter cut-off current i ebo -100 -100 na v eb =-4v collector emitter cut-off current i ces -100 -100 na na v ces =-60v v ces =-80v collector-emitter saturation voltage v ce(sat) -35 -135 -140...
Description PNP Low Sat Transistor

File Size 448.39K  /  4 Page

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    BD908

Inchange Semiconductor Company Limited
Part No. BD908
OCR Text ...ing voltage- : v ceo(sus) = -60v(min) complement to type bd907 applications designed for use in general purpose power amplifier ...10a; i b = -2.5a -3.0 v v be( sat ) base-emitter saturation voltage i c = -10a; i b = -2.5a ...
Description isc Silicon PNP Power Transistor

File Size 81.22K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE391 NTE390
OCR Text ...e Current: ICEO = 0.7mA @ VCE = 60v D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, ...10a Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon Complementary Transistors General Purpose

File Size 20.26K  /  2 Page

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    Fairchild Semiconductor Corporation
Part No. IRFWZ14
OCR Text ...rent: 10 m a (max.) @ v ds = 60v lower r ds(on) : 0.097 w (typ.) $gydqfhg 3rzhu 026)(7 thermal resistance junction-to-case junction...10a, v dd =25v, r g =27 w , starting t j =25 c (3) i sd 10a, di/dt 200a/ m s, v dd bv ds...
Description 60v N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管)

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    SavantIC
Part No. 2N6383
OCR Text ...v ce =40v; i b =0 2n6384 v ce =60v; i b =0 i ceo collector cut-off current 2n6385 v ce =80v; i b =0 1.0 ma 2n6383 v ce =40v; v be ...10a ; v ce =3v 100 c ob output capacitance i e =0; v cb =10v;f=1mhz 200 pf savantic sem...
Description (2N6383 - 2N6385) Silicon Power Transistor

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Part No. FX20ASJ-06
OCR Text ................................. -60v * rDS (ON) (MAX) ................................................ 97m * ID ................................10a, VGS = -10V ID = -10a, VGS = -4V ID = -10a, VGS = -10V ID = -10a, VDS = -10V VDS = -10V, VGS = 0...
Description Pch POWER MOSFET HIGH-SPEED SWITCHING USE
ER 3C 3#16S SKT RECP LINE 20 A, 60 V, 0.097 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 63.20K  /  4 Page

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    Fairchild Semiconductor Corporation
Part No. IRFSZ14A
OCR Text ...ent : 10 (max.) @ v ds = 60v lower r ds(on) : 0.097 (typ.) advanced power mosfet thermal resistance junction-to-case junc...10a, r g =24 see fig 13 v ds =48v,v gs =10v, i d =10a see fig 6 & fig 12 drain-to-source ...
Description N-Channel Power MOSFET0V.14ΩAN沟道功率MOS场效应管(漏源电0V,导通电.14Ω,漏电流8A

File Size 251.82K  /  7 Page

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