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600v8a Datasheet PDF File

For 600v8a Found Datasheets File :: 1333 Search Time::2.25ms
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				Microsemi Corporation
Part No.	APT28GA60K
OCR Text	600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon...8A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter V...
Description	High Speed PT IGBT
File Size	206.30K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW08T120 IKW08T12008
OCR Text	...v ge =15v, t sc 10 s v cc = 600v, t j = 25 c - 48 - a switching characteristic, inductive load, at t j =25 c value p...8a, v ge =0/15v, r g =81 ? , l 2) =180nh, c 2) =39pf energy losses include ?tail? and diode...
Description	Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	367.06K / 16 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FFPF08S60ST12
OCR Text	... ? power switching circuits 8a, 600v stealth tm ii rectifier the ffpf08s60st is stealth tm ii rectifier with soft recovery characteristics. it is silicon nitride passivated ion-implanted epi- taxial planar construction. this device is ...
Description	8A, 600V STEALTHTM II Rectifier
File Size	265.06K / 5 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	MUR860 MUR840 FN2091 RURP860 RURP840
OCR Text	600V Ultrafast Diodes The MUR840, MUR860, RURP840 and RURP860 are low forward voltage drop ultrafast recovery rectifiers (trr < 60ns). They...8A IF = 8A, TC = 150oC IR VR = 400V VR = 600V VR = 400V, TC = 150oC VR = 600V, TC = 150oC trr IF = 1...
Description	8A, 400V - 600V Ultrafast Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC From old datasheet system 8A/ 400V - 600V Ultrafast Diodes
File Size	48.29K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FCPF16N60 FCP16N60 FCP16N60_0703
OCR Text	600V N-Channel MOSFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on) = 0.22 * Ultra low gate char...8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(No...
Description	600V N-Channel MOSFET
File Size	322.93K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGB4060DPBF
OCR Text	...d-Free Package G E C VCES = 600V IC = 8.0A, TC = 100C tsc > 5s, Tjmax = 175C n-channel C VCE(on) typ. = 1.55V Benefits * H...8A, VGE = 15V, TJ = 25C f Ref.Fig f CT6 VCE(on) VGE(th) VGE(th)/TJ Collector-to-E...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	287.68K / 10 Page	View it Online	Download Datasheet

				Rohm
Part No.	SCS208AGHR SCS209AGHR
OCR Text	...v m a pf v r =1v,f=1mhz ns v r =600v,f=1mhz - v r =400v,di/dt=350a/ m s - 13 - - pf 30 switching time tc - 13 - v r =400v,di/dt=350a/ m s m a v r =600v,tj=25c v 1.6 1.63 i f =8a,tj=175c v r =600v,tj=175c v 160 - - - 1.35 - - l electrical ch...
Description	SiC Schottky Barrier Diode
File Size	439.97K / 6 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2027-01
OCR Text	...che Proof N-channel MOS-FET 600V 1,2 8A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ...
Description	N-channel MOS-FET
File Size	209.46K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FCPF16N60 FCPF20N60 FCP16N60 FCP20N60
OCR Text	600V N-Channel MOSFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge...8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold...
Description	600V N-Channel MOSFET
File Size	1,129.58K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP6650DPBF-15
OCR Text	...de) ? ??? ??? 3.35 v ces = 600v i c = 50a, t c =100c t sc ?? 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 35a app...8a ? 1.30 ? i f = 8a, t j = 175c switching characteristics @ t j = 25c (unless otherwise speci...
Description	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
File Size	678.21K / 13 Page	View it Online	Download Datasheet

For 600v8a Found Datasheets File :: 1333 Search Time::2.25ms
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