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  6.2-270 Datasheet PDF File

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...bol Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- -10 10 -2.0 0.095 0.155 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ...l Output Characteristics -10 V -6 V -4 V Pulse Test -3 V 0 Ta = 25 C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typ...2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Drain Current 25C -8...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...n Current I D (A) -40 -6 V -5 V Pulse Test -4 V -40 -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -10 V DS (V) -8 -30 Drain Current -20 -10 75 C 0 -1 -2 -3 Gate to Source Voltage -4 -5...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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    2SJ544

HITACHI[Hitachi Semiconductor]
Part No. 2SJ544
OCR Text ....5 V -2 V -10 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 3 2SJ544 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) -5 Drain to Source Saturation ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.22K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ... VGS = -4 V 20 -10 V 10 5 -1.6 -1.2 I D = -50 A -0.8 -0.4 -5 A 0 -4 -8 -12 Gate to Source Voltage -20 A -10 A -16 -20 V GS (V) 2 1 -1 -3 -10 -30 -100 -300 -1000 Drain Current I D (A) Static Drain to Source on Sta...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ580

Sanyo Semicon Device
Part No. 2SJ580
OCR Text ...nit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Spe...
Description Ultrahigh-Speed Switching Applications

File Size 29.05K  /  4 Page

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    2SJ591 2SJ591LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ591 2SJ591LS
OCR Text ...rive. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 123 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allow...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 32.20K  /  4 Page

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    2SJ597

SANYO[Sanyo Semicon Device]
Part No. 2SJ597
OCR Text ...ons unit : mm 2083B [2SJ597] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 0.6 5.5 7.0 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 S...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 30.93K  /  4 Page

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    2SK1277

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK1277
OCR Text ...fs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9...
Description N-Channel MOS-FET(250V, 0.12Ohm, 30A, 150W) 30 A, 250 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 205.29K  /  2 Page

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    2SK1279

FUJI[Fuji Electric]
Part No. 2SK1279
OCR Text ...fs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9...
Description N-channel MOS-FET

File Size 198.95K  /  2 Page

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