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Kersemi Electronic Co., Ltd.
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| Part No. |
IRFR/U5410
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| OCR Text |
...ductance 3.2 ??? ??? s v ds = -50v, i d = -7.8a ??? ??? -25 a v ds = -100v, v gs = 0v ??? ??? -250 v ds = -80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 ... |
| Description |
HEXFET Power MOSFET
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| File Size |
2,000.65K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRF634NSPBF IRF634NLPBF IRF634NPBF
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| OCR Text |
..., ID = 250A 5.4 --- --- S VDS = 50v, ID = 4.8a --- --- 25 VDS = 250v, VGS = 0V A --- --- 250 VDS = 200V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 34 ID = 4.8a --- --- 6.5 nC VDS = 200V --- --- 16 VGS = 1... |
| Description |
HEXFET Power MOSFET
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| File Size |
219.70K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY9140CM IRFY9140C
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| OCR Text |
... VGS = -10V, ID = -15.8a VDS = -50v VDD = -50v, ID = -15.8a, VGS = -10V, RG =7.5
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output C... |
| Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
253.79K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY9140M IRFY9140
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| OCR Text |
... VGS = -10V, ID = -15.8a VDS = -50v VDD = -50v, ID = -15.8a, VGS = -10V, RG =7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge... |
| Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
277.03K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHF7330SE IRHF7330SEPBF
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| OCR Text |
..., IF = 2.9A, di/dt 100A/s VDD 50v
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Therm...8a VGS = 12V, ID = 1.8a VGS = 0V, ID = 2.9A
Min
400 2.0 -- -- -- -- -- --
Max
-- 4.5 100 -10... |
| Description |
2.9 A, 400 V, 1.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF)
400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
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| File Size |
125.12K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNJ67234 IRHNJ63234
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| OCR Text |
... IF = 12.4A, di/dt 100A/s VDD 50v A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Ther...8a VGS = 0V, ID = 12.4A
-- 4.0 100 -100 10 0.21 1.2
Part numbers IRHNJ67234 and IRHNJ63234
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| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
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| File Size |
184.80K /
8 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN5R6-100XS
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| OCR Text |
...rge v gs =10v; i d =15a; v ds =50v; see figure 14 ; see figure 15 -41.2-nc q g(tot) total gate charge - 145 - nc avalanche ruggedness e ...8a; v sup 100 v; unclamped; r gs =50 ? ; see figure 3 --550mj
psmn5r6-100xs all information pr... |
| Description |
N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
214.41K /
15 Page |
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it Online |
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