4.9ghz pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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4.9ghz Datasheet PDF File

For 4.9ghz Found Datasheets File :: 804 Search Time::3.031ms
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				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181 Q62702-F1271
OCR Text	...81 RFs Q62702-F1271 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 24 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	61.12K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0917A MGF0917A11
OCR Text	...ag) (ang) (db) 600 0.981 -33.12 4.043 146.73 0.013 60.97 0.542 -37.01 0.21 24.93 1000 0.963 -52.23 3.628 130.91 0.017 47.27 0.574 -55.99 0.27 23.29 1400 0.950 -67.81 3.204 115.76 0.020 33.78 0.613 -71.29 0.32 22.05 1800 0.940 -80.66 2.813 1...
Description	High-power GaAs FET (small signal gain stage)
File Size	104.84K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0916A MGF0916A11
OCR Text	...ge v ds =3v,i d =0.1ma -1.5 - -4.5 v gm transconductance v ds =3v,i d =100ma - 90 - ms po output power v ds =6v,i d =100ma,f=1.9ghz - 23 - dbm ? add power added efficiency pin=5dbm - 30 - % g lp linear power gain - ...
Description	High-power GaAs FET (small signal gain stage)
File Size	107.33K / 4 Page	View it Online	Download Datasheet

				njr
Part No.	NJG1528KC1
OCR Text	...iew) Orientation Mark 1 2 3 4 5 10 9 8 7 6 Pin connection 1. P1 2. VCTL1 3. GND 4. VCTL2 5. P2 6. P3 7. GND 8. GND 9. GND 10. P4 ...9GHz, PIN=31dBm f=0.9GHz, PIN=31dBm f=1.9GHz, PIN=25dBm f=0.9GHz, PIN=31dBm f=0.9GHz, PIN=31dBm f=1....
Description	DPDT SWITCH GaAs MMIC
File Size	418.63K / 10 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD[Analog Devices]
Part No.	AD8314 AD8314ARM AD8314ARM-REEL AD8314ARM-REEL7 AD8314-EVAL ANALOGDEVICESINC.-AD8314-EVAL
OCR Text	...micro_SOIC package and consumes 4.5 mA from a 2.7 V to 5.5 V supply. When powered down, the typical sleep current is 20 A. The AD8314 is ...9GHz 0.8 1.9GHz 0.6 2.5GHz ERROR - dB VUP - Volts 1 0 -1 -2 0.2 -3 -4 -70 1.9GHz 0.1GHz 2.5GHz 0....
Description	100 MHz-2500 MHz 45 dB RF Detector/Controller
File Size	274.61K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB420 BGB420E6327
OCR Text	...put * Typical supply voltage: 1.4-3.3V * SIEGET(R)-25 technology Bias,4 Bias C,3 Description SIEGET(R)-25 NPN Transistor with integ...9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol GMA \|S21\|2 IL F50 min. 16.0 typ. 17.5 22 16...
Description	Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
File Size	436.18K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB540
OCR Text	...History: Previous Version: Page 4-9 2002-09-11 2001-08-16 Subjects (major changes since last revision) RF parameters and SPICE model u...9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol Gms \|S21\|2 IL F50 P-1dB 12 10 OIP3 22 20 CC...
Description	Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
File Size	95.55K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	MGF7124A 7124A
OCR Text	...Low supply voltage operation VD=4.8V * Enable to control gain VGdual=0/-4V Pi 2 7 VG1 VGdual 3 6 VD1 NU 4 5 VG2 Po 8.4 12.2 ...9GHz,/4DQPSK VGdual=0/-4V,PO=26dBm,f=1.9GHz PO=26dBm,f(ACP)=600kHz, f=1.9GHz,/4DQPSK PO=26dBm,f(ACP)...
Description	From old datasheet system 1.9GHz BAND AMPLIFIER MMIC
File Size	8.30K / 1 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0915A MGF0915A11
OCR Text	4.5w smd non - matched description the mgf0915a gaas fet with an n-channel schottky gate, is designed for use uhf band amplifiers. ...9ghz,pin=23dbm ? high power gain gp=14.5db(typ.) @f=1.9ghz ? high power added efficiency ...
Description	High-power GaAs FET (small signal gain stage)
File Size	107.57K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0913A MGF0913A11
OCR Text	... i gf forward gate current 5.4 ma p t total power dissipation 5.0 w tch cannel temperature 175 ? c tstg storage temperatu...9ghz 29.5 31 - dbm ? add power added efficiency pin=18dbm - 48 - % g lp linear power ...
Description	High-power GaAs FET (small signal gain stage)
File Size	106.86K / 4 Page	View it Online	Download Datasheet

For 4.9ghz Found Datasheets File :: 804 Search Time::3.031ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |