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  4.56.0ghz Datasheet PDF File

For 4.56.0ghz Found Datasheets File :: 186    Search Time::1.297ms    
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    SSW-124

Stanford Microdevices
Part No. SSW-124
OCR Text ...-40 dB -50 -60 -70 DC 1 2 3 4 5 6 GHz Electrical Specifications at Ta = 25C Sy mbol Ins Parameters: Test C onditions Inserti on L...56] REF HEATSINK PLATE 45 MAX. TYP(8X) .008 [.20] (8X) .036 [.91] .180 [4.57] SEATING PLANE TO BE...
Description DC-6 GHz High Isolation SPDT GaAs MMIC Switch

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    TGA2922-SG

TriQuint Semiconductor
Part No. TGA2922-SG
OCR Text ... * * * * * * * TGA2922-SG 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 480mA 34 dBm Nominal P1dB @ 8V 480mA 2.5% EV...56.083 -14.725 4.867 -35.404 -151.89 -1.72 76.43 7.6 -1.162 54.327 -15.078 45.009 -33.594 -123.56 -1...
Description 2 Watt 802.11a Packaged Amplifier

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    HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 H3101B HFA310104

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 H3101B HFA310104
OCR Text ...101 (SOIC) TOP VIEW 8 7 6 Q6 3 4 5 Q1 Q2 Q5 1 2 Q3 Q4 NOTE: Q5 and Q6 - 2 Paralleled 3m x 50m Transistors Q1, Q2, Q3, Q4 - Single ...56 2.45 2.35 2.26 2.18 2.10 168.57 157.89 148.44 140.36 133.56 127.88 123.10 119.04 115.57 112.55 10...
Description Gilbert Cell UHF Transistor Array(Gb 单元超高频晶体管阵列) 吉尔伯特细胞超高频晶体管阵列(千兆单元超高频晶体管阵列)

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    UPG2150T5L-E2-A UPG2150T5L

CEL[California Eastern Labs]
Part No. UPG2150T5L-E2-A UPG2150T5L
OCR Text ...View> <Bottom View> 1 2 3 4 5 6 7 8 9 10 11 12 TRUTH TABLE Vcont1 2.3 to 3.6 V 0 0.2 V 0 0.2 V Vcont2 0 0.2 V 2.3 to 3.6 V 0 0...56 pF, Each port, unless otherwise specified) Parameter Insertion Loss Symbol LINS Pass ANT to RF1,...
Description GaAs INTEGRATED CIRCUIT

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    NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A

California Eastern Labs
Part No. NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
OCR Text ...GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) a...56.7 55.4 54.5 53.0 52.0 51.3 50.3 48.6 48.0 46.7 46.3 45.1 44.3 43.3 42.6 41.6 40.7 40.1 38.9 38.5 ...
Description L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 1,229.35K  /  11 Page

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    FSX027WF

Eudyna Devices Inc
Part No. FSX027WF
OCR Text ...te currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should n...56.5 -66.8 -73.6 -83.7 -97.6 -115.9 -134.5 -150.7 -168.5 172.6 155.2 139.4 121.8 Download S-Param...
Description General Purpose GaAs FET

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    FMM5815X

Eudyna Devices Inc
Part No. FMM5815X
OCR Text ...gate currents should not exceed 4 and -0.39 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (...56 40 24 add (%) 17.5 18.0 18.5 19.0 19.5 20.0 Frequency (GHz) 2 FMM5815X...
Description 17.5-20GHz Power Amplifier MMIC

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    SANYO[Sanyo Semicon Device]
Part No. 2SC5647
OCR Text ... [2SC5647] 0.3 0.75 0.6 0.4 0.8 0.4 1.6 0 to 0.1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : ...56.36 50.83 47.33 44.50 41.44 38.58 36.67 33.19 32.25 30.78 30.45 S22 0.989 0.985 0.961 0.931 0.889 ...
Description UHF to S Band Low-Noise Amplifier and OSC Applications

File Size 36.42K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. CFH120-10 CFH120 CFH120-06 CFH120-08
OCR Text ...1 = source 2 = drain 3 = source 4 = gate CFH120 ______________________________________________________________________________________...56.4 49.6 42.8 35.8 29.6 22.5 15.8 8.9 2.0 -5.2 -12.4 -19.9 -26.9 -34.0 -40.2 -46.3 -52.3 -58.5 -64....
Description Preliminary Datasheet

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    SANYO[Sanyo Semicon Device]
Part No. FH202
OCR Text ...02] 0.425 0.15 6 5 4 1.25 2.1 0 to 0.1 0.2 0.425 12 0.65 2.0 3 Specifications Absolute Maximum Ratings at Ta =...56.8 57.9 58.4 58.9 58.6 58.1 | S22 | 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0....
Description NPN Epitaxial Planar Silicon Composite Transistor VCO OSC Circuit Applications

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