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NXP Semiconductors N.V.
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| Part No. |
PSMN8R0-40BS
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| OCR Text |
...arge v gs =10v; i d =25a; v ds =20v; see figure 14 ; see figure 15 -3.8-nc q g(tot) total gate charge - 21 - nc avalanche ruggedness e ds(...40v v gs gate-source voltage -20 20 v i d drain current v gs =10v; t mb = 100 c; see figure 1 -55a ... |
| Description |
N-channel 40 V 7.6 m standard level MOSFET in D2PAK
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| File Size |
197.90K /
14 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
TDA9536
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| OCR Text |
...andwidth at -3db v dc =50v, d v=20v pp 50 mhz t r rise time v dc =50v, d v=40v pp 7.2 ns t f fall time v dc =50v, d v=40v pp 7.9 ns t set 2.5% settling time v dc =50v, d v=40v pp 15 ns ct l low frequency crosstalk v dc =50v, d v=20v pp f = ... |
| Description |
7.5NS TRIPLE-CHANNEL, HIGH VOLTAGE VIDEO AMPLIFIER
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| File Size |
289.51K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN1R1-40BS
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| OCR Text |
... gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - 10 100 na v gs =-20v; v ds =0v; t j = 25 c - 10 100 na r dson drain-source on-state resistance v gs =10v; i d =25a; t j = 100 c; see figure 12 ; see figure 13 -1.682m ? v gs =1... |
| Description |
N-channel 40 V 1.4 m standard level MOSFET in D2PAK
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| File Size |
201.54K /
15 Page |
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it Online |
Download Datasheet |
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