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  10.7-11.7ghz Datasheet PDF File

For 10.7-11.7ghz Found Datasheets File :: 555    Search Time::2.5ms    
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    MGF0952P

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0952P
OCR Text ...rature Ratings -15 -15 3.5 -10 21 20.0 150 -40 to +150 (Ta=25C) Unit V V A mA mA W C C Recommended maximum ratings Symbol Tch ...7(A) 40 35 Pin=25dBm Po(dBm) 30 Pin=20dBm 25 Pin=15dBm 20 Pin=10dBm ...
Description L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
From old datasheet system

File Size 1,403.39K  /  50 Page

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    FMM5052ZE

Eudyna Devices Inc
Part No. FMM5052ZE
OCR Text ...D1,2 VGG1,2 Pin Tstg Top Rating 10 -8 15 -55 to +125 -40 to +85 Unit V V dBm C C RECOMMENDED OPERATING CONDITIONS (Case Temperature Tc=25...7 26.0 19.0 1.0 -12 220 -2.0 1.5 300 - Unit GHz dBm dB dB dB mA mA 25.0 VDD1, 2=8V, VGG1, 2=-3...
Description MMIC POWER AMPLIFIER

File Size 268.13K  /  4 Page

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    HITTITE[Hittite Microwave Corporation]
Part No. HMC381LP6
OCR Text ...) Isolation @ LO = 0 dBm 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 10 8 6 4 2 0 1.4 1.6 1.8 2 2.2 RF FREQUENCY (GHz) 2.4 2.6 + 25C + ...7 1.8 1.9 2 2.1 2.2 RF FREQUENCY (GHz) 2.3 2.4 LO = -4dBm LO = -2dBm LO = 0dBm LO = 2dBm LO = 4dBm ...
Description HIGH IP3 RFIC DUAL DOWNCONVERTER 1.7 - 2.2 GHz
HIGH IP3 RFIC DUAL DOWNCONVERTER, 1.7 - 2.2 GHZ

File Size 322.09K  /  8 Page

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    ESM5068VU EMM5068VU

EUDYNA[Eudyna Devices Inc]
Part No. ESM5068VU EMM5068VU
OCR Text ...plifier MMIC Device Rating 10 -3 26 +175 Unit V V dBm o o -55 to +125 Conditions 6 1300 <=12 -40 to +85 Limits Typ. Max. 13.3 33*1 ...7~13.3GHz Unit GHz dBm dB % dBc *1 Min. 9.5 31*1 28*2 22*1 20 *2 2400 - -37*3 - mA mA d...
Description X-Band Power Amplifier MMIC

File Size 218.83K  /  16 Page

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    SY58011UMG SY58011UMITR SY58011UMI SY58011U SY58011UMGTR

MICREL[Micrel Semiconductor]
Part No. SY58011UMG SY58011UMITR SY58011UMI SY58011U SY58011UMGTR
OCR Text ...s Power supply 2.5V 5% and 3.3V 10% Industrial temperature range: -40C to +85C Available in 16-pin (3mm x 3mm) MLF(R) package Precision Edge...7 8 Q0 /Q0 /Q1 Q1 SY58011UMI SY58011UMITR(2) SY58011UMG(3) SY58011UMGTR(2, 3) GND VCC ...
Description 7GHZ, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION

File Size 198.47K  /  9 Page

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    SY58019UMGTR SY58019UMITR SY58017U SY58026U SY58052U SY58016L SY58018U SY58019U SY58019UMG SY58025U SY58027U SY58051U

MICREL[Micrel Semiconductor]
Part No. SY58019UMGTR SY58019UMITR SY58017U SY58026U SY58052U SY58016L SY58018U SY58019U SY58019UMG SY58025U SY58027U SY58051U
OCR Text ...emperature and voltage: * DC to 10.7Gbps data throughput * DC to > 7GHz fMAX (clock) * < 240ps propagation delay * < 70ps tr / tf times s Ul...7 8 Q GND GND /Q SY58019UMI SY58019UMITR(2) SY58019UMG(3) SY58019UMGTR(2, 3) SEL VT1 ...
Description ULTRA-PRECISION DIFFERENTIAL 400MV LVPECL 2:1 MUX WITH INTERNAL TERMINATION

File Size 322.24K  /  12 Page

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    LT5575 LT5575EUFTRPBF LT5568 LT5528 LT5575EUF LT5575EUFPBF LTC5530 LTC5531 LT5572 LT5575EUF-PBF LT5575EUF-TRPBF LT5560 L

Linear Technology
Part No. LT5575 LT5575EUFTRPBF LT5568 LT5528 LT5575EUF LT5575EUFPBF LTC5530 LTC5531 LT5572 LT5575EUF-PBF LT5575EUF-TRPBF LT5560 LT5526 LTC5505 LTC5508 LTC5509 LTC5507 LT5534 LT5537 LTC5536 LTC5532
OCR Text ...m) 40 DSB NF -40C 25C 85C 30 20 10 0 IOUT+ LPF 30 25 20 15 10 5 0 -15 LO INPUT LO 0/90 90 QOUT+ QOUT- LPF VGA A/D CO...7 VCC 8 VCC GND IOUT+ GND 1 RF 2 GND 3 GND 4 IOUT- Power Supply Voltage ............................
Description LT5575
800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator

File Size 290.97K  /  16 Page

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    TIM3742-8UL

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM3742-8UL
OCR Text ... UNIT MIN. TYP. MAX. dBm 38.5 10.0 -44 39.5 11.0 2.2 37 -47 2.2 2.6 0.6 2.6 80 f = 3.7 - 4.2GHz add IM3 dBc A C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinc...
Description MICROWAVE POWER GaAs FET

File Size 68.81K  /  4 Page

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    FMM5057X

Fuji Electric
Eudyna Devices Inc
Part No. FMM5057X
OCR Text ...a=25) Item Symbol Condition 10 12 1200 -40 to +85 Unit V dBm mA Test Conditions Frequency Range f VDD=10.0V Output Power at 1d...7.1 8.5 GHz 32.0 34.0 dBm 23 26 dB +/- 1.2 +/-2.0 dB 7.0 10 dB 10 dB G.C.P. : Gain Compression Point...
Description 7100 MHz - 8500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
C-Band Power Amplifier MMIC

File Size 617.08K  /  14 Page

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    FMM5815GJ-1

Rohm Co., Ltd.
Eudyna Devices Inc
Part No. FMM5815GJ-1
OCR Text ...G Pin Tstg Top Condition Rating 10 -7.0 22 -55 to +125 -40 to +85 Unit V V dBm C C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exce...
Description Amplifier. Other 放大器。其
17.7-19.7GHz Power Amplifier MMIC

File Size 90.44K  /  4 Page

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For 10.7-11.7ghz Found Datasheets File :: 555    Search Time::2.5ms    
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