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  0-400v Datasheet PDF File

For 0-400v Found Datasheets File :: 14953    Search Time::2.25ms    
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    Microsemi
Part No. APTM50UM13SAG
OCR Text ...reverse transfer capacitance 0.42 q g total gate charge v gs = 10v v bus = 250v i d =335a 800 nc q gs gate C source c...400v di/dt = 1200a/s t j = 25c 70 ns t j = 125c 140 q rr reverse recovery charge ...
Description Single Switch Series And Parallel Diodes

File Size 643.21K  /  7 Page

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    SKP10N60A SKB10N60A SKW10N60A

Infineon Technologies AG
Part No. SKP10N60A SKB10N60A SKW10N60A
OCR Text ... I C = 10 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 1 0 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage...400V, VGE = 0/+15V, RG = 25) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode

File Size 437.79K  /  14 Page

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    Infineon Technologies
Part No. SKP15N60
OCR Text ...A TO-220AB TO-247AC TO-263AB 0.9 1.7 62 40 40 K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Sta...400V, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description Fast IGBT in NPT-technology with soft / fast recovery anti-parallel EmCon diode

File Size 488.22K  /  14 Page

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    IRGP4069PBF

International Rectifier
Part No. IRGP4069PBF
OCR Text ...g Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Max. 600 76 50 35 105 140 20 30 268 134 -55 to +175 ...400V Conditions IC = 35A, VCC = 400V, VGE = 15V J RG = 10, L = 200H, LS = 150nH, TJ = 25C Ene...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 350.86K  /  10 Page

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    ST Microelectronics
Part No. STTH2R06S
OCR Text ...m 600 v t j 175 c v f (typ) 1.0 v t rr (typ) 35 ns k a do-41 stth2r06 sma stth2r06a smb stth2r06u smc stth2r06s www.st.com characterist...400v t =125c r j characteristics stth2r06 4/10 doc id 10757 rev 4 fi...
Description TURBO 2 Ultrafast High Voltage Rectifier

File Size 103.54K  /  10 Page

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    ST Microelectronics
Part No. STTH2R06A STTH2R06U STTH2R06RL
OCR Text ...av) average forward current = 0.5 do-41 tl = 70c 2 a sma tl = 85c 2 smb tl = 100c 2 i fsm surge non repetitive forward current do-41 tp = ...400v t =125c r j stth2r06 4/8 figure 7: reverse recovery time versus di f /dt (typical values) fig...
Description HIGH EFFICIENCY ULTRAFAST DIODE

File Size 81.24K  /  8 Page

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    Microsemi
Part No. APT8043SLLG
OCR Text ... apt8043bll apt8043sll 800v 20a 0.430 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to dri...400v i d = 20a @ 25c resistive switching v gs = 15v v dd = 400v i d = 20a @ 25c r ...
Description MOSFET

File Size 152.93K  /  5 Page

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    IRGP4069D-EPBF IRGP4069DPBF

International Rectifier
Part No. IRGP4069D-EPBF IRGP4069DPBF
OCR Text ...g Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) c A d Continuous Gate-to-Emitter Voltage V W...400V Conditions IC = 35A, VCC = 400V, VGE = 15V J RG = 10, L = 200H, LS = 150nH, TJ = 25C Ene...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 426.68K  /  11 Page

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    Microsemi
Part No. APT8020LLLG
OCR Text ...(g) apt8020lll (g) 800v 38a 0.200 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to dri...400v i d = 38a @ 25c resistive switching v gs = 15v v dd = 400v i d = 38a @ 25c r ...
Description MOSFET

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    Microsemi
Part No. APT6017LLLG
OCR Text ...apt6017b2ll apt6017lll 600v 35a 0.170 ?? ?? ? t-max ? to-264 b2ll lll power mos 7 ? is a new generation of low loss, high voltage, n-chan...400v, v gs = 15v i d = 35a, r g = 5 ? inductive switching @ 125c v dd = 400v, v gs =...
Description MOSFET

File Size 152.32K  /  5 Page

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