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  rg-6 u Datasheet PDF File

For rg-6 u Found Datasheets File :: 15074    Search Time::3.437ms    
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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS ...6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS ...6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... 5) VDD = 250 V, ID = 8.0 A, RG = 25 (Note 4, 5) -------- 22 65 125 75 41 6.5 17 55 140 260 160 53 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 30, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1100 --- VGS = 0V 170 ...6. Typical Gate Charge Vs. Gate-to-Source Voltage 4 Fig 7. Typical Source-Drain Diode Forward ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...S =-100V VDD =-100V, ID =-6.5A, RG =7.5 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On De...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...15 VDD = 25V 17 ID = 1.0A ns 46 RG = 6.0, VGS = 10V 34 RD = 25 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) ...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...DD = -50V --- ID = -4.0A ns --- RG = 22 --- RD = 12, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 350 --- VGS = 0V 110 --...6.8 showing the A G integral reverse --- --- -27 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS =...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...DD = -50V --- ID = -4.0A ns --- RG = 22 --- RD = 12, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die co...6.8 showing the A G integral reverse --- --- -27 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS =...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...DD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...DD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings a...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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