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For recovery Found Datasheets File :: 80725 Search Time::1.766ms
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				Alpha & Omega Semiconductors
Part No.	AON7452
OCR Text	...hout notice. body diode reverse recovery charge i f =2.5a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime forward transcon...
Description	100V N-Channel MOSFET
File Size	243.29K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STGB20H60DF STGP20H60DF STGF20H60DF
OCR Text	...-circuit rated ? ultrafast soft recovery antiparallel diode applications ? motor control ? ups, pfc description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt series offers t...
Description	600 V, 20 A high speed trench gate field-stop IGBT
File Size	1,826.19K / 22 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ON Semiconductor
Part No.	NTMS10P02R2-D NTMS10P02R2/D
OCR Text	...Diode Exhibits High Speed, Soft recovery Avalanche Energy Specified SO-8 Mounting Information Provided http://onsemi.com P-Channel D G S Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular ...
Description	HDTMOS3e Single SO-8 HDTMOS3e单的SO - 8 HDTMOS3e Single SO-8 P-Channel Enhancement-Mode Power MOSFET
File Size	105.84K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMSF3350-D
OCR Text	...ce diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in po...
Description	WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products
File Size	137.16K / 12 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	FB190SA10
OCR Text	...rgy e ar (1) 48 mj peak diode recovery dv/dt dv/dt (3) 5.7 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c insulation withstand voltage (ac-rms) v iso 2.5 kv mounting torque m4 screw 1.3 nm www.vis...
Description	Power MOSFET, 190 A
File Size	181.96K / 9 Page	View it Online	Download Datasheet


Part No.	UF2006FCT
OCR Text	...h surge capacity. ? ultra fast recovery times, high voltage. ? in compliance with eu rohs 2002/95/ec directives ultrafast recovery rectifiers notes: 1. measured at 1 mhz and applied reverse voltage of 4.0 vdc. 2. reverse recovery test con...
Description	10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
File Size	49.06K / 2 Page	View it Online	Download Datasheet

				JILIN SINO-MICROELECTRONICS CO., LTD.
Part No.	JCS9N90FT-O-F-N-B
OCR Text	... IAR EAR 3 dv/dt Peak Diode recovery dv/dtnote 3 PD TC=25 -Derate above 25 TJTSTG 67.9 W Power Dissipation 0.54 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 ...
Description	N-CHANNEL MOSFET
File Size	845.36K / 8 Page	View it Online	Download Datasheet

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