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				Dynex Semiconductor
Part No.	DIM1200ASM45-TL000 DIM1200ASM45-TL000-15
OCR Text	...units i ces collector cut - off current v ge = 0v, v ce = v ces 4 ma v ge = 0v, v ce = v ces , t case = 125 c 90 ma i ges gate leakage current v ge = 20v, v ce = 0v 1 a v ge(th) g...
Description	Single Switch IGBT Module
File Size	359.29K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPG2185T6R-E2 UPG2185T6R-E2-A
OCR Text	...tput1 input ? output2 high low off on low high on off absolute maximum ratings (t a = +25 c, unless otherwise specified) parameter symbol ratings unit switch control voltage v cont +6.0 note v input power p in +31 dbm ...
Description	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
File Size	111.29K / 11 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPA2672T1R
OCR Text	...s ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. 50 d.u.t. r l v dd i g = ? 2 ma characteristics symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ?1.0 a v ds = ?12 v, v gs...
Description	DUAL P-CHANNEL MOSFET -12 V, -4.0 A, 67 m
File Size	234.99K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPH11003NL
OCR Text	... gate leakage current drain cut-off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 20 v, v ds = 0 v v ds = 30 v, v gs ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	231.75K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8A09-H
OCR Text	... gate leakage current drain cut-off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 20 v, v ds = 0 v v ds = 30 v, v gs ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	252.28K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPC6009-H
OCR Text	... gate leakage current drain cut-off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 20 v, v ds = 0 v v ds = 40 v, v gs ...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	227.03K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK72E08N1
OCR Text	... gate leakage current drain cut-off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage drain-source on-resistance (note 5) symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs ...
Description	Power MOSFET (N-ch single 60V<VDSS≤150V)
File Size	247.10K / 9 Page	View it Online	Download Datasheet

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