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  multi-epitaxial Datasheet PDF File

For multi-epitaxial Found Datasheets File :: 478    Search Time::1.219ms    
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    ST Microelectronics
Part No. STBV32
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description TRANSISTOR,BJT,NPN,400V V(BR)CEO,1.5A I(C),TO-92
From old datasheet system

File Size 64.41K  /  7 Page

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    STMicro
Part No. STBV32
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 66.45K  /  7 Page

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    STX13005-AP STX13005 9151

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STX13005-AP STX13005 9151
OCR Text ...manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压快速开关NPN电源晶体
From old datasheet system
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 311.98K  /  8 Page

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    ST8812FX

http://
STMicroelectronics
Part No. ST8812FX
OCR Text ...FX is manufactured using latest Multi Epitaxial Planar technology with high voltage capability. It shows wide R.B.S.O.A. and high switching speed thanks to its Cellular Emitter structure with planar edge termination and deep base diffusion....
Description High voltage fast-switching NPN Power transistor

File Size 125.39K  /  10 Page

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    STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. BULD116D BULD116D-1
OCR Text ...he device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-251AA
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 210.00K  /  6 Page

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    BULK128D-B 5249

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BULK128D-B 5249
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 213.32K  /  7 Page

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    STX13003 7928

STMICROELECTRONICS[STMicroelectronics]
Part No. STX13003 7928
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description From old datasheet system
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 235.10K  /  7 Page

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    PHILIPS[Philips Semiconductors]
Part No. 80C31X 87C51 80C51
OCR Text ...e, a serial I/O port for either multi-processor communications, I/O expansion or full duplex UART, and on-chip oscillator and clock circuits. In addition, the device has two software selectable modes of power reduction--idle mode and power-...
Description CMOS single-chip 8-bit microcontrollers

File Size 263.42K  /  22 Page

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    SXA-389

http://
ETC
Part No. SXA-389
OCR Text ...ty makes it an ideal choice for multi-carrier as well as digital applications. SXA-389 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Active Bias Product Features * On-chip Active Bias Control, Single 5V Supply * High Outpu...
Description 400-2500 MHz ? W Medium Power GaAs HBT Amplifier with Active Bias
400-2500 MHz W Medium Power GaAs HBT Amplifier with Active Bias

File Size 208.88K  /  7 Page

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    DWEP17-12 CWP21-CG DWS14-45A DWS19-15B DWS24-45A DWS33-45B DWS37-30B DWS17-30B DWS217-30B DWS23-45B DWS27-30B DWS29-15B

IXYS[IXYS Corporation]
Part No. DWEP17-12 CWP21-CG DWS14-45A DWS19-15B DWS24-45A DWS33-45B DWS37-30B DWS17-30B DWS217-30B DWS23-45B DWS27-30B DWS29-15B DWS39-08D DWS9-15B CWP130 CWP16-CG CWP180 CWP24 CWP25-CG CWP339 CWP341 CWP345 CWP347 CWP35 CWP41 CWP50 CWP55 CWP69 CWP71 CWP7-CG CWP8 CWP8-CG DLFP150-17S DLFP15-16F DLFP15-18F DLFP200-17S DLFP25-16F DLFP25-18F DLFP55-16F DLFP55-17S DLFP55-18F DLFP68-16F DLFP68-17S DLFP68-18F DWEP-06 DWEP10-10 DWEP12-06 DWEP15-06 DWEP18-10 DWEP19-12 DWEP20-10 DWEP23-06 DWEP25-06 DWEP27-02 DWEP29-12 DWEP3-10 DWEP49-12 DWEP9-12 DWFN17-16_18 DWFN21-16_18 DWFN35-16_18 DWGS04-018C DWGS04-03A DWGS04-03C DWGS10-018A DWGS10-018C DWGS10-01C DWGS10-025A DWGS10-025C DWGS10-03A DWGS10-03C DWGS20-018A DWGS20-018C DWGS20-025A DWGS20-025C DWGS20-03C DWHFP150-12S DWHFP15-12F DWHFP23-12F DWHFP56-12F DWHFP56-12S DWHFP69-12F DWHFP69-12S DWHP150-06F DWHP15-06F DWHP23-06F DWHP56-06F DWHP69-06F DWHP8-06F DWLP150-04 DWLP15-02 DWLP15-02B DWLP15-03 DWLP15-03A DWLP15-04 DWLP15-06A DWLP15-06B DWLP15-12 DWLP23-03 DWLP23-03A DWLP23-04 DWLP23-06A DWLP23-06B DWLP23-12 DWLP25-02 DWLP4-02 DWLP4-03 DWLP4-06 DWLP55-03 DWLP55-04 DWLP55-06 DWLP55-12 DWLP75-03 DWLP75-04 DWLP75-06 DWLP75-12 DWLP8-03 DWLP8-04 DWLP8-06A D
OCR Text ...r chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either the same metallization scheme or...Epitaxial Diodes (FRED) Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics a...
Description Rectifier Diodes & FRED

File Size 593.57K  /  22 Page

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For multi-epitaxial Found Datasheets File :: 478    Search Time::1.219ms    
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