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For heated Found Datasheets File :: 2149 Search Time::6.313ms
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				ON Semiconductor
Part No.	NST3906DP6T5G
OCR Text	...RISTICS Characteristic (Single heated) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to...
Description	Dual General Purpose Dual General Purpose
File Size	93.21K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NST847BPDP6T5G
OCR Text	...RISTICS Characteristic (Single heated) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to...
Description	Dual Complementary General Purpose Transistor
File Size	99.25K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NST847BDP6T5G
OCR Text	...RISTICS Characteristic (Single heated) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to...
Description	Dual General Purpose Transistor
File Size	90.78K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NST857BDP6T5G
OCR Text	...RISTICS Characteristic (Single heated) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to...
Description	Dual General Purpose Transistor
File Size	91.01K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NIS1050 NIS1050MNTBG
OCR Text	... 2. Dual die operation (equally-heated). THERMAL RESISTANCE RATINGS Parameter SINGLE DIE OPERATION (SELF-heated) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4) Junction-to-Ambient - t 5 ...
Description	Protection Interface Circuit for PMICs with Integrated OVP Control
File Size	106.50K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	DTC124XD
OCR Text	...234dw1 (sot ? 363) one junction heated total device dissipation t a = 25 ? c (note 1) (note 2) derate above 25 ? c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ ? c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 ? ...
Description	Dual NPN Bias Resistor Transistors R1 = 22 kOhm, R2 = 47 kOhm
File Size	127.00K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MUN5137DW1
OCR Text	...137dw1 (sot ? 363) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 c/w ...
Description	Dual PNP Bias Resistor Transistors
File Size	126.96K / 8 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	XQ1006-BD-EV1 XQ1006-BD-000V XQ1006-BD
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator
File Size	388.44K / 5 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	XQ1004-BD-EV1 XQ1004-BD-000V XQ1004-BD
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	7.4-8.6 GHz GaAs MMIC Voltage Controlled Oscillator
File Size	191.46K / 5 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	XQ1003-BD XQ1003-BD-EV1 XQ1003-BD-000V
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator
File Size	193.83K / 5 Page	View it Online	Download Datasheet

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