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TOSHIBA
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| Part No. |
TPC6130
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| OCR Text |
...solute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e... |
| Description |
Power MOSFET (P-ch single)
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| File Size |
221.81K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK100S04N1L
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| OCR Text |
...solute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
240.21K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
SSM3K324R
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| OCR Text |
...solute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e... |
| Description |
Small-signal MOSFET
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| File Size |
220.27K /
9 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
SDP10U20DN
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| OCR Text |
...ete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairc... |
| Description |
10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
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| File Size |
165.23K /
5 Page |
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it Online |
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Shenzhen Luguang Electronic Technology Co., Ltd
AVAGO TECHNOLOGIES LIMI...
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| Part No. |
PEX8605
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| OCR Text |
...2 shows a typical fan - out design, where the processor provides a pci express link that needs to be fanned into a larger number of smaller ports for a variety of i/o functions, each with different bandwidth requirements. mult... |
| Description |
Low Packet Latency & High Performance
PCI Express Gen 2 Switch
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| File Size |
271.10K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
FDN358P
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| OCR Text |
...g capability. high density cell design for extremely low r ds(on) . exceptional on-resistance and maximum dc current capability. supersot tm -3 p -c hannel logic level enhancement mode power field effect transistors are produced using f... |
| Description |
SuperSOT-3
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| File Size |
162.54K /
2 Page |
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it Online |
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