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  darlington Datasheet PDF File

For darlington Found Datasheets File :: 5171    Search Time::0.89ms    
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    SGB-2433 SGB-2433Z

SIRENZA[SIRENZA MICRODEVICES]
Part No. SGB-2433 SGB-2433Z
OCR Text ... HBT MMIC amplifier utilizing a darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2433...
Description DC - 4 GHz Active Bias Gain Block

File Size 124.51K  /  6 Page

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    SGB-2233

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. SGB-2233
OCR Text ... HBT MMIC amplifier utilizing a darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2233...
Description DC-4.5GHz Active Bias Gain Block 直流4.5GHz有源偏置增益模块

File Size 186.58K  /  6 Page

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    NZT7053 2N7052 2N7053

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. NZT7053 2N7052 2N7053
OCR Text ... TO-226 B SOT-223 NPN darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* ...
Description NPN darlington Transistor(NPN达林顿晶体管) 1500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226

File Size 41.56K  /  4 Page

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    CJF6668

CDIL
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CJF6668
OCR Text ... 000019.2 PNP SILICON PLANAR darlington POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose darlington Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS. DESCRIPTION C...
Description PNP SILICON PLANAR darlington POWER TRANSISTOR

File Size 169.38K  /  4 Page

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    CENTRAL[Central Semiconductor Corp]
Part No. CMPTA27
OCR Text darlington TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 type is a Silicon NPN darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount packag...
Description NPN SILICON darlington TRANSISTOR

File Size 98.50K  /  2 Page

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    ONSEMI[ON Semiconductor]
Part No. CS387H CS3341_05 CS3341YD14 CS3341YD14G CS3341YDR14 CS3341YDR14G CS3351 CS3351YD14 CS3351YD14G CS3351YDR14 CS3351YDR14G CS387 CS3341 CS334105
OCR Text darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3-phase alternators. It drives an external power darlington for control of the alternator field current....
Description Alternator Voltage Regulator darlington Driver(交流电压调整达林顿驱动器)

File Size 75.10K  /  8 Page

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    LR2004A LR2004L

Leshan Radio Company
Part No. LR2004A LR2004L
OCR Text ...4a/l high-voltage, high-current darlington arrays feature continuous load current ratings to 500 ma for each of the seven drivers. at an appropriate duty cycle depending on ambient temperature and number of drivers turned on simultaneously...
Description HIGH-VOLTAGE, HIGH-CURRENT darlington ARRAYS

File Size 265.15K  /  8 Page

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    LR2003A

Leshan Radio Company
Part No. LR2003A
OCR Text ...3a/l high-voltage, high-current darlington arrays feature continuous load current ratings to 500 ma for each of the seven drivers. at an appropriate duty cycle depending on ambient temperature and number of drivers turned on simultaneously...
Description HIGH-VOLTAGE, HIGH-CURRENT darlington ARRAYS

File Size 270.11K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FJB102
OCR Text darlington Transistor FJB102 High Voltage Power darlington Transistor Features * High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) * Low Collector-Emitter Saturation Voltage * High Collector-Emitter Sustaining Voltage * Monolithic...
Description High Voltage Power darlington Transistor

File Size 156.20K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FMBA14
OCR Text ...-6 Mark: .1N NPN Multi-Chip darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol VCES VCBO V...
Description NPN Multi-Chip darlington Transistor

File Size 47.47K  /  3 Page

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