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For 64m-word Found Datasheets File :: 544 Search Time::2.578ms
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				SIEMENS A G DRAM SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	HYS72V8200GU HYS64V8200GU HYS72V16220GU HYS64V16220GU PC100_2 HYS64-74V8200GU PC66-222-920 HYS64V16220GU-10 HYS64V16220GU-8 HYS64V16220GU-8B HYS64V8200GU-10 HYS64V8200GU-8 HYS64V8200GU-8B HYS72V16220GU-10 HYS72V16220GU-8 HYS72V8200GU-10 HYS72V8200GU-8 PC100-222-620 PC100-323-620
OCR Text	...eed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8...word x 8 Bit) SA0 SA1 SA2 SCL SA0 SA1 SA2 SCL SDA WP 47 k DQMB3 DQ(31:24) DQMB7 DQ(63:56) ...
Description	3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module 3.38米64/72-Bit一银行内存模块3.36米x 64/72-Bit 2银行内存模块 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:10ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes From old datasheet system
File Size	83.22K / 17 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MBM29LV652UE90 E520886
OCR Text	...886-3E FLASH MEMORY CMOS 64M (4M x 16) BIT MBM29LV652UE90 s GENERAL DESCRIPTION The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash me...word at a time using the EPROM programming mechanism of hot electron injection. s FEATURES * 0.2...
Description	Flash Memory - single 3V From old datasheet system
File Size	242.19K / 59 Page	View it Online	Download Datasheet

				sharp
Part No.	LH28F640
OCR Text	64M (x16) Flash Memory LH28F640BFN-PTTLZ2 LHF64FZ2 * Handle this document carefully for it contains material protected by internation...Word Page Mode Low Power Operation * 2.7V Read and Write Operations * Automatic Power Savings Mode R...
Description	IC,EEPROM,NOR FLASH,4MX16,CMOS,SOP,44PIN,PLASTIC From old datasheet system
File Size	473.03K / 30 Page	View it Online	Download Datasheet

				Macronix 旺宏
Part No.	MX23L6430 23L6430
OCR Text	64M-Bit Synchronous Mask ROM FEATURES * Switchable organization : 4M x 16 ( word mode ) or 2M x 32 ( double word mode ) * Power supply 3.0V ~ 3.6V * TTL compatible with multiplexed address * All inputs are sampled at rising edge of system...
Description	64M-Bit Synchronous Mask ROM From old datasheet system
File Size	145.89K / 21 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	AT52BC6402A AT52BC6402A-70CI AT52BC6402A-85CI AT52BC6402AT AT52BC6402AT-70CI AT52BC6402AT-85CI
OCR Text	...00 ms; 4K Word Sectors - 100 ms 64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being Programmed/Erased - Memory Plane A: 16M of Memory Including Eight 4K Word Sectors - Memory Plane B: 16M of Memory Cons...
Description	64 MBIT FLASH 16 MBIT PSRAM
File Size	293.63K / 38 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC
OCR Text	64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES * Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) * Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF, 120/40ns(Max.)@CL=10...
Description	64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位（8Mx8 / 4Mx16）的CMOS掩膜ROM
File Size	62.06K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M5M4V64S40ATP-8A M5M4V64S40ATP-10 A98009_A M5M4V64S40ATP-8L M5M4V64S40ATP-10L M5M4V64S40ATP-8
OCR Text	64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and out...
Description	From old datasheet system 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
File Size	1,080.92K / 51 Page	View it Online	Download Datasheet

				Samsung
Part No.	K9F1G08U0M
OCR Text	64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. v...Word - Block Erase -X8 device(K9F1G08X0M): (128K + 4K)Byte -X16 device(K9F1G16X0M): (64K + 2K)Word *...
Description	IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC From old datasheet system
File Size	475.80K / 39 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MB84VZ064D-70 E550501
OCR Text	...& FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (x16) FLASH MEMORY & 32M (x16) Mobile FCRAMTM & 8M (x16) STATIC RAM MB84VZ06...word. Any combination of sectors can be concurrently erased. It also supports full chip erase. * Hid...
Description	4-Stacked MCP From old datasheet system
File Size	460.30K / 69 Page	View it Online	Download Datasheet

				Atmel Corp. ATMEL[ATMEL Corporation]
Part No.	AT52BR6408A AT52BR6408AT-85CI AT52BR6408A-70CI AT52BR6408A-85CI AT52BR6408AT AT52BR6408AT-70CI
OCR Text	...00 ms; 4K Word Sectors - 100 ms 64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being Programmed/Erased - Memory Plane A: 16M of Memory Including Eight 4K Word Sectors - Memory Plane B: 16M of Memory Cons...
Description	From old datasheet system 64-Mbit Flash, 8-Mbit SRAM (x16 I/O) 64 Mbit Multi-plane Flash combined with 8-Mbit SRAM
File Size	251.61K / 37 Page	View it Online	Download Datasheet

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