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![FDD3510H](Maker_logo/fairchild_semiconductor.GIF)
Fairchild Semiconductor
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Part No. |
FDD3510H
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OCR Text |
...3. Starting TJ = 25C, N-ch: L = 3mh, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mh, IAS = -6A, VDD = -80V, VGS = -10V.
FDD3510H Rev.C
3
www.fairchildsemi.com
FDD3510H Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characte... |
Description |
Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM
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File Size |
424.11K /
10 Page |
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it Online |
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Silikron Semiconductor ...
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Part No. |
SSF5508U
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OCR Text |
...le pulse avalanche energy @ l=0.3mh 375 mj i ar avalanche current @ l=0.3mh 50 a t j t stg operating junction and storage te mperature range -55 to + 175 c v dss 55v r ds (on) 4.5mohm(typ.) i d 110a to220 ? marking ... |
Description |
Advanced trench MOSFET process technology
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File Size |
405.55K /
8 Page |
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it Online |
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![FDS8958A10 FDS8958A FDS8958AF085](Maker_logo/fairchild_semiconductor.GIF)
FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
FDS8958A10 FDS8958A FDS8958AF085
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OCR Text |
... 2.0% 3. Starting TJ = 25C, L = 3mh, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25C, L = 3mh, IAS = 3A, VDD = 30V, VGS = 10V (Q2).
FDS8958A_F085 Rev. A
3
www.fairchildsemi.com
FDS8958A_F085 Dual N & P-Channel PowerTrench... |
Description |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench MOSFET 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
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File Size |
745.80K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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